Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Photodetectors for the spectral range 2-4 {mu}m, based on an asymmetric type-II heterostructure p-InAs/AlSb/InAsSb/AlSb/(p, n)GaSb with a single deep quantum well (QW) or three deep QWs at the heterointerface, have been grown by metal-organic vapor phase epitaxy and analyzed. The transport, luminescent, photoelectric, current-voltage, and capacitance-voltage characteristics of these structures have been examined. A high-intensity positive and negative luminescence was observed in the spectral range 3-4 {mu}m at high temperatures (300-400 K). The photosensitivity spectra were in the range 1.2-3.6 {mu}m (T = 77 K). Large values of the quantum yield ({eta} = 0.6-0.7), responsivity (S{sub {lambda}} = 0.9-1.4 A W{sup -1}), and detectivity (D*{sub {lambda}} = 3.5 Multiplication-Sign 10{sup 11} to 10{sup 10} cm Hz{sup 1/2} W{sup -1}) were obtained at T = 77-200 K. The small capacitance of the structures (C = 7.5 pF at V = -1 V and T = 300 K) enabled an estimate of the response time of the photodetector at {tau} = 75 ps, which corresponds to a bandwidth of about 6 GHz. Photodetectors of this kind are promising for heterodyne detection of the emission of quantum-cascade lasers and IR spectroscopy.
- OSTI ID:
- 22004864
- Journal Information:
- Semiconductors, Vol. 45, Issue 2; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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