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Title: Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector

Abstract

On the basis of a model of rectangular potentials and different electron effective masses in wells and barriers of an open resonant-tunneling structure with identical outer barriers, a theory has been developed and the dynamic conductance caused by the interaction of the electromagnetic field with electrons passing through the structure has been calculated. Using the example of the three-barrier resonant-tunneling structure with In{sub 0.53}Ga{sub 0.47}As wells and In{sub 0.52}Al{sub 0.48}As barriers, it is shown that, independently of the geometrical sizes of potential wells and barriers, there exist three geometrical configurations (positions of the inner barrier with respect to outer ones) at which the nanosystem, as an active element, provides optimum operating conditions of the quantum cascade detector.

Authors:
 [1]
  1. Fedkovich Chernivtsy National University (Ukraine)
Publication Date:
OSTI Identifier:
22004847
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 3; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONFIGURATION; ELECTROMAGNETIC FIELDS; ELECTRONS; INTERACTIONS; POTENTIALS; SYMMETRY; TUNNEL EFFECT

Citation Formats

Tkach, N. V., E-mail: ktf@chnu.edu.ua, and Seti, Ju A. Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector. United States: N. p., 2011. Web. doi:10.1134/S1063782611030195.
Tkach, N. V., E-mail: ktf@chnu.edu.ua, & Seti, Ju A. Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector. United States. doi:10.1134/S1063782611030195.
Tkach, N. V., E-mail: ktf@chnu.edu.ua, and Seti, Ju A. Tue . "Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector". United States. doi:10.1134/S1063782611030195.
@article{osti_22004847,
title = {Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector},
author = {Tkach, N. V., E-mail: ktf@chnu.edu.ua and Seti, Ju A},
abstractNote = {On the basis of a model of rectangular potentials and different electron effective masses in wells and barriers of an open resonant-tunneling structure with identical outer barriers, a theory has been developed and the dynamic conductance caused by the interaction of the electromagnetic field with electrons passing through the structure has been calculated. Using the example of the three-barrier resonant-tunneling structure with In{sub 0.53}Ga{sub 0.47}As wells and In{sub 0.52}Al{sub 0.48}As barriers, it is shown that, independently of the geometrical sizes of potential wells and barriers, there exist three geometrical configurations (positions of the inner barrier with respect to outer ones) at which the nanosystem, as an active element, provides optimum operating conditions of the quantum cascade detector.},
doi = {10.1134/S1063782611030195},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 45,
place = {United States},
year = {2011},
month = {3}
}