The effect of composition on the formation of light-emitting Si nanostructures in SiO{sub x} layers on irradiation with swift heavy ions
- Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
- Joint Institute for Nuclear Research (Russian Federation)
The SiO{sub x} layers different in composition (0 < x < 2) are irradiated with Xe ions with the energy 167 MeV and the dose 10{sup 14} cm{sup -2} to stimulate the formation of light-emitting Si nanostructures. The irradiation gives rise to a photoluminescence band with the parameters dependent on x. As the Si content is increased, the photoluminescence is first enhanced, with the peak remaining arranged near the wavelength {lambda} Almost-Equal-To 600 nm, and then the peak shifts to {lambda} Almost-Equal-To 800 nm. It is concluded that the emission sources are quantum-confined nanoprecipitates formed by disproportionation of SiO{sub x} in ion tracks due to profound ionization losses. Changes in the photoluminescence spectrum with increasing x are attributed firstly to the increase in the probability of formation of nanoprecipitates and then to the increase in their dimensions; the latter effect is accompanied with a shift of the emission band to longer wavelengths. The subsequent quenching of photoluminescence is interpreted as a result of the removal of quantum confinement in nanoprecipitates and their coagulation.
- OSTI ID:
- 22004843
- Journal Information:
- Semiconductors, Vol. 45, Issue 3; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO{sub x} Films after Low-Temperature Annealing
Formation of light-emitting nanostructures in layers of stoichiometric SiO{sub 2} irradiated with swift heavy ions