Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces
- Russian Academy of Sciences, Institute for Analytical Instrumentation (Russian Federation)
- Russian Academy of Sciences, Nanotechnology Research and Education Center, St. Petersburg Academic University (Russian Federation)
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
- Max-Planck-Gesellschaft fuer Mikrostrukturphysik (Germany)
The processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of production of the GaAs nanowires, molecular-beam epitaxy is used. It is found that, in the range of substrate temperatures between 610 and 630 Degree-Sign C, the surface density of nanowires and their diameter sharply increases, whereas the temperature dependence of the nanowire length exhibits a maximum at 610 Degree-Sign C. An increase in the temperature to 640 Degree-Sign C suppresses the formation of nanowires. The method that provides a means for the fabrication of purely cubic GaAs nanowires is described. A theoretical justification of the formation of the cubic phase in self-catalyzed GaAs nanowires is presented.
- OSTI ID:
- 22004839
- Journal Information:
- Semiconductors, Vol. 45, Issue 4; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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