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Title: Specific features of photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from monosilane-hydrogen mixture

Journal Article · · Semiconductors
 [1]; ;  [1]
  1. Moscow State University, Physics Faculty (Russian Federation)

Photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from a monosilane-hydrogen mixture have been studied at a fraction of hydrogen in the mixture that corresponds to the onset of formation of a nanocrystalline phase in the structure of the films obtained. A behavior untypical of amorphous hydrogenated silicon films is observed for the photoconductivity and the spectral dependence of the absorption coefficient. The temperature dependences of the photoconductivity in the films under study are found to vary with the energy of incident photons. At a photon energy of 1.3 eV, temperature quenching of photoconductivity is observed. Prolonged illumination of the films led to a certain decrease in the absorption coefficient at photon energies in the range 1.2-1.5 eV. The results obtained are attributed to the possible presence of silicon nanocrystals in the structure of the films and to the influence of these nanocrystals on their photoelectric and optical properties.

OSTI ID:
22004829
Journal Information:
Semiconductors, Vol. 45, Issue 4; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English