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Title: Fabrication of por-Si/SnO{sub x} nanocomposite layers for gas microsensors and nanosensors

Abstract

Two-phase nanocomposite layers based on porous silicon and nonstoichiometric tin oxide were fabricated by various methods. The structure, as well as elemental and phase composition, of the obtained nanocomposites were studied using transmission and scanning electron microscopy, Raman spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The results obtained confirm the formation of nanocomposite layers with a thickness as large as 2 {mu}m thick and SnO{sub x} stoichiometry coefficients x = 1.0-2.0. Significant tin diffusion into the porous silicon matrix with D{sub eff} Almost-Equal-To 10{sup -14} cm{sup 2} s{sup -1} was observed upon annealing at 770 K. Test sensor structures based on por-Si/SnO{sub x} nanocomposite layers grown by magnetron deposition showed fairly high stability of properties and sensitivity to NO{sub 2}.

Authors:
; ; ; ; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Omsk Branch, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22004804
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 45; Journal Issue: 5; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AUGER ELECTRON SPECTROSCOPY; COMPOSITE MATERIALS; DEPOSITION; FABRICATION; LAYERS; MAGNETRONS; NANOSTRUCTURES; NITROGEN DIOXIDE; POROUS MATERIALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SENSITIVITY; SILICON; STABILITY; THICKNESS; TIN; TIN OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Bolotov, V. V., E-mail: bolotov@obisp.oscsbras.ru, Korusenko, P. M., Nesov, S. N., Povoroznyuk, S. N., Roslikov, V. E., Kurdyukova, E. A., Sten'kin, Yu. A., Shelyagin, R. V., Knyazev, E. V., Kan, V. E., and Ponomareva, I. V. Fabrication of por-Si/SnO{sub x} nanocomposite layers for gas microsensors and nanosensors. United States: N. p., 2011. Web. doi:10.1134/S1063782611050071.
Bolotov, V. V., E-mail: bolotov@obisp.oscsbras.ru, Korusenko, P. M., Nesov, S. N., Povoroznyuk, S. N., Roslikov, V. E., Kurdyukova, E. A., Sten'kin, Yu. A., Shelyagin, R. V., Knyazev, E. V., Kan, V. E., & Ponomareva, I. V. Fabrication of por-Si/SnO{sub x} nanocomposite layers for gas microsensors and nanosensors. United States. doi:10.1134/S1063782611050071.
Bolotov, V. V., E-mail: bolotov@obisp.oscsbras.ru, Korusenko, P. M., Nesov, S. N., Povoroznyuk, S. N., Roslikov, V. E., Kurdyukova, E. A., Sten'kin, Yu. A., Shelyagin, R. V., Knyazev, E. V., Kan, V. E., and Ponomareva, I. V. Sun . "Fabrication of por-Si/SnO{sub x} nanocomposite layers for gas microsensors and nanosensors". United States. doi:10.1134/S1063782611050071.
@article{osti_22004804,
title = {Fabrication of por-Si/SnO{sub x} nanocomposite layers for gas microsensors and nanosensors},
author = {Bolotov, V. V., E-mail: bolotov@obisp.oscsbras.ru and Korusenko, P. M. and Nesov, S. N. and Povoroznyuk, S. N. and Roslikov, V. E. and Kurdyukova, E. A. and Sten'kin, Yu. A. and Shelyagin, R. V. and Knyazev, E. V. and Kan, V. E. and Ponomareva, I. V.},
abstractNote = {Two-phase nanocomposite layers based on porous silicon and nonstoichiometric tin oxide were fabricated by various methods. The structure, as well as elemental and phase composition, of the obtained nanocomposites were studied using transmission and scanning electron microscopy, Raman spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The results obtained confirm the formation of nanocomposite layers with a thickness as large as 2 {mu}m thick and SnO{sub x} stoichiometry coefficients x = 1.0-2.0. Significant tin diffusion into the porous silicon matrix with D{sub eff} Almost-Equal-To 10{sup -14} cm{sup 2} s{sup -1} was observed upon annealing at 770 K. Test sensor structures based on por-Si/SnO{sub x} nanocomposite layers grown by magnetron deposition showed fairly high stability of properties and sensitivity to NO{sub 2}.},
doi = {10.1134/S1063782611050071},
journal = {Semiconductors},
number = 5,
volume = 45,
place = {United States},
year = {Sun May 15 00:00:00 EDT 2011},
month = {Sun May 15 00:00:00 EDT 2011}
}