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Title: Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

Abstract

The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the n-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori doping of n-TiNiSn with donors originates from partial, up to 0.5 at %, redistribution of Ti and Ni atoms in crystallographic sites of Ti atoms. The correlation is established between the donor concentration, amplitude of modulation of the continuous energy bands, and degree of filling of low-scale fluctuation potential wells with charge carriers. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and compensated semiconductor.

Authors:
 [1];  [2];  [3];  [4];  [5];  [3]
  1. National Academy of Sciences of Ukraine, Pidstrygach Institute for Applied Problems in Mechanics and Mathematics (Ukraine)
  2. Universitaet Wien, Institut fuer Physikalische Chemie (Austria)
  3. National University Lvivska Politekhnika (Ukraine)
  4. CNRS, Laboratoire de Neel (France)
  5. Ivan Franko National University of Lviv (Ukraine)
Publication Date:
OSTI Identifier:
22004782
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 7; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DISTRIBUTION; DOPED MATERIALS; ELECTRON DENSITY; MAGNETIC PROPERTIES; SEMICONDUCTOR MATERIALS

Citation Formats

Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Rogl, P., Romaka, V. V., Hlil, E. K., Stadnyk, Yu. V., and Budgerak, S. M. Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor. United States: N. p., 2011. Web. doi:10.1134/S1063782611070190.
Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Rogl, P., Romaka, V. V., Hlil, E. K., Stadnyk, Yu. V., & Budgerak, S. M. Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor. United States. doi:10.1134/S1063782611070190.
Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Rogl, P., Romaka, V. V., Hlil, E. K., Stadnyk, Yu. V., and Budgerak, S. M. Fri . "Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor". United States. doi:10.1134/S1063782611070190.
@article{osti_22004782,
title = {Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor},
author = {Romaka, V. A., E-mail: vromaka@polynet.lviv.ua and Rogl, P. and Romaka, V. V. and Hlil, E. K. and Stadnyk, Yu. V. and Budgerak, S. M.},
abstractNote = {The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the n-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori doping of n-TiNiSn with donors originates from partial, up to 0.5 at %, redistribution of Ti and Ni atoms in crystallographic sites of Ti atoms. The correlation is established between the donor concentration, amplitude of modulation of the continuous energy bands, and degree of filling of low-scale fluctuation potential wells with charge carriers. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and compensated semiconductor.},
doi = {10.1134/S1063782611070190},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 45,
place = {United States},
year = {2011},
month = {7}
}