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Title: Photoluminescence of Hg{sub 1-x}Cd{sub x}Te based heterostructures grown by molecular-beam epitaxy

Abstract

Photoluminescence (PL) of Hg{sub 1-x}Cd{sub x}Te-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied. It is shown that a pronounced disruption of the long-range order in the crystal lattice is characteristic of structures of this kind. It is demonstrated that the observed disordering is mostly due to the nonequilibrium nature of MBE and can be partly eliminated by postgrowth thermal annealing. Low-temperature spectra of epitaxial layers and structures with wide potential wells are dominated by the recombination peak of an exciton localized in density-of-states tails; the energy of this peak is substantially lower than the energy gap. In quantum-well (QW) structures at low temperatures, the main PL peak is due to carrier recombination between QW levels and the energy of the emitted photon is strictly determined by the effective (with the QW levels taken into account) energy gap.

Authors:
; ;  [1]; ; ; ; ; ; ;  [2]
  1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
  2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22004779
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 7; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL LATTICES; ENERGY GAP; GALLIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; PEAKS; PHOTOLUMINESCENCE; QUANTUM WELLS; RECOMBINATION; SPECTRA; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K

Citation Formats

Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru, Bazhenov, N. L., Ivanov-Omskii, V. I., Mikhailov, N. N., Yakushev, M. V., Sorochkin, A. V., Remesnik, V. G., Dvoretsky, S. A., Varavin, V. S., and Sidorov, Yu. G. Photoluminescence of Hg{sub 1-x}Cd{sub x}Te based heterostructures grown by molecular-beam epitaxy. United States: N. p., 2011. Web. doi:10.1134/S1063782611070153.
Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru, Bazhenov, N. L., Ivanov-Omskii, V. I., Mikhailov, N. N., Yakushev, M. V., Sorochkin, A. V., Remesnik, V. G., Dvoretsky, S. A., Varavin, V. S., & Sidorov, Yu. G. Photoluminescence of Hg{sub 1-x}Cd{sub x}Te based heterostructures grown by molecular-beam epitaxy. United States. doi:10.1134/S1063782611070153.
Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru, Bazhenov, N. L., Ivanov-Omskii, V. I., Mikhailov, N. N., Yakushev, M. V., Sorochkin, A. V., Remesnik, V. G., Dvoretsky, S. A., Varavin, V. S., and Sidorov, Yu. G. Fri . "Photoluminescence of Hg{sub 1-x}Cd{sub x}Te based heterostructures grown by molecular-beam epitaxy". United States. doi:10.1134/S1063782611070153.
@article{osti_22004779,
title = {Photoluminescence of Hg{sub 1-x}Cd{sub x}Te based heterostructures grown by molecular-beam epitaxy},
author = {Mynbaev, K. D., E-mail: mynkad@mail.ioffe.ru and Bazhenov, N. L. and Ivanov-Omskii, V. I. and Mikhailov, N. N. and Yakushev, M. V. and Sorochkin, A. V. and Remesnik, V. G. and Dvoretsky, S. A. and Varavin, V. S. and Sidorov, Yu. G.},
abstractNote = {Photoluminescence (PL) of Hg{sub 1-x}Cd{sub x}Te-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied. It is shown that a pronounced disruption of the long-range order in the crystal lattice is characteristic of structures of this kind. It is demonstrated that the observed disordering is mostly due to the nonequilibrium nature of MBE and can be partly eliminated by postgrowth thermal annealing. Low-temperature spectra of epitaxial layers and structures with wide potential wells are dominated by the recombination peak of an exciton localized in density-of-states tails; the energy of this peak is substantially lower than the energy gap. In quantum-well (QW) structures at low temperatures, the main PL peak is due to carrier recombination between QW levels and the energy of the emitted photon is strictly determined by the effective (with the QW levels taken into account) energy gap.},
doi = {10.1134/S1063782611070153},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 45,
place = {United States},
year = {2011},
month = {7}
}