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Title: Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates

Abstract

Microstructure of the CdTe (310) and CdHgTe (310) layers grown by molecular-beam epitaxy on Si substrates has been studied by the methods of transmission electron microscopy and selective etching. It is established that formation of antiphase domains in the CdHgTe/CdTe/ZnTe/Si(310) is determined by the conditions of formation of the ZnTe/Si interface. Monodomain layers can be obtained by providing conditions that enhance zinc adsorption. An increase in the growth temperature and in the pressure of Te{sub 2} vapors gives rise to antiphase domains and induces an increase in their density to the extent of the growth of poly-crystals. It is found that stacking faults exist in a CdHgTe/Si(310) heterostructure; these defects are anisotropically distributed in the bulk of grown layers. The stacking faults are predominantly located in one (111) plane, which intersects the (310) surface at an angle of 68 Degree-Sign . The stacking faults originate at the ZnTe/Si(310) interface. The causes of origination of stacking faults and of their anisotropic distribution are discussed.

Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22004773
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 7; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; ANISOTROPY; CADMIUM TELLURIDES; CRYSTALS; DEFECTS; DISTRIBUTION; INTERFACES; LAYERS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; STACKING FAULTS; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; ZINC TELLURIDES

Citation Formats

Yakushev, M. V., E-mail: yakushev@isp.nsc.ru, Gutakovsky, A. K., Sabinina, I. V., and Sidorov, Yu. G.. Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates. United States: N. p., 2011. Web. doi:10.1134/S1063782611070232.
Yakushev, M. V., E-mail: yakushev@isp.nsc.ru, Gutakovsky, A. K., Sabinina, I. V., & Sidorov, Yu. G.. Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates. United States. doi:10.1134/S1063782611070232.
Yakushev, M. V., E-mail: yakushev@isp.nsc.ru, Gutakovsky, A. K., Sabinina, I. V., and Sidorov, Yu. G.. Fri . "Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates". United States. doi:10.1134/S1063782611070232.
@article{osti_22004773,
title = {Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates},
author = {Yakushev, M. V., E-mail: yakushev@isp.nsc.ru and Gutakovsky, A. K. and Sabinina, I. V. and Sidorov, Yu. G.},
abstractNote = {Microstructure of the CdTe (310) and CdHgTe (310) layers grown by molecular-beam epitaxy on Si substrates has been studied by the methods of transmission electron microscopy and selective etching. It is established that formation of antiphase domains in the CdHgTe/CdTe/ZnTe/Si(310) is determined by the conditions of formation of the ZnTe/Si interface. Monodomain layers can be obtained by providing conditions that enhance zinc adsorption. An increase in the growth temperature and in the pressure of Te{sub 2} vapors gives rise to antiphase domains and induces an increase in their density to the extent of the growth of poly-crystals. It is found that stacking faults exist in a CdHgTe/Si(310) heterostructure; these defects are anisotropically distributed in the bulk of grown layers. The stacking faults are predominantly located in one (111) plane, which intersects the (310) surface at an angle of 68 Degree-Sign . The stacking faults originate at the ZnTe/Si(310) interface. The causes of origination of stacking faults and of their anisotropic distribution are discussed.},
doi = {10.1134/S1063782611070232},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 45,
place = {United States},
year = {2011},
month = {7}
}