Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide
Abstract
Formation of centers of electron-hole pair generation near the silicon-oxide interface under field and thermal effects on Si-MOS structures with ultrathin oxide and poststress annihilation of these structures are studied. Concentrations of generation centers of minority charge carriers (holes) are determined from experimental dynamic current-voltage characteristics of Si-MOS diodes by fixing the accumulation duration of the equilibrium hole density near the surface separating the semiconductor and insulator during the sample transition from a deep depletion state to a pronounced inversion state. It is shown that MOS structures with ultrathin oxide are much more 'pliable' to field and thermal stresses in comparison with samples with thick a insulating layer: objects with ultrathin oxide are more easily damaged by external stresses, but more rapidly recover to the initial state at room temperature.
- Authors:
- Publication Date:
- OSTI Identifier:
- 22004771
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 45; Journal Issue: 7; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ANNIHILATION; CHARGE CARRIERS; INTERFACES; LAYERS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SURFACES; TEMPERATURE DEPENDENCE; THERMAL STRESSES
Citation Formats
Goldman, E I, Kukharskaya, N F, Narishkina, V G, and Chucheva, G. V., E-mail: gvc@ms.ire.rssi.ru. Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide. United States: N. p., 2011.
Web. doi:10.1134/S1063782611070098.
Goldman, E I, Kukharskaya, N F, Narishkina, V G, & Chucheva, G. V., E-mail: gvc@ms.ire.rssi.ru. Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide. United States. https://doi.org/10.1134/S1063782611070098
Goldman, E I, Kukharskaya, N F, Narishkina, V G, and Chucheva, G. V., E-mail: gvc@ms.ire.rssi.ru. 2011.
"Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide". United States. https://doi.org/10.1134/S1063782611070098.
@article{osti_22004771,
title = {Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide},
author = {Goldman, E I and Kukharskaya, N F and Narishkina, V G and Chucheva, G. V., E-mail: gvc@ms.ire.rssi.ru},
abstractNote = {Formation of centers of electron-hole pair generation near the silicon-oxide interface under field and thermal effects on Si-MOS structures with ultrathin oxide and poststress annihilation of these structures are studied. Concentrations of generation centers of minority charge carriers (holes) are determined from experimental dynamic current-voltage characteristics of Si-MOS diodes by fixing the accumulation duration of the equilibrium hole density near the surface separating the semiconductor and insulator during the sample transition from a deep depletion state to a pronounced inversion state. It is shown that MOS structures with ultrathin oxide are much more 'pliable' to field and thermal stresses in comparison with samples with thick a insulating layer: objects with ultrathin oxide are more easily damaged by external stresses, but more rapidly recover to the initial state at room temperature.},
doi = {10.1134/S1063782611070098},
url = {https://www.osti.gov/biblio/22004771},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 45,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2011},
month = {Fri Jul 15 00:00:00 EDT 2011}
}