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Title: Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide

Abstract

Formation of centers of electron-hole pair generation near the silicon-oxide interface under field and thermal effects on Si-MOS structures with ultrathin oxide and poststress annihilation of these structures are studied. Concentrations of generation centers of minority charge carriers (holes) are determined from experimental dynamic current-voltage characteristics of Si-MOS diodes by fixing the accumulation duration of the equilibrium hole density near the surface separating the semiconductor and insulator during the sample transition from a deep depletion state to a pronounced inversion state. It is shown that MOS structures with ultrathin oxide are much more 'pliable' to field and thermal stresses in comparison with samples with thick a insulating layer: objects with ultrathin oxide are more easily damaged by external stresses, but more rapidly recover to the initial state at room temperature.

Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Fryazino Branch of Institute of Radio Engineering and Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22004771
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 7; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNIHILATION; CHARGE CARRIERS; INTERFACES; LAYERS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SURFACES; TEMPERATURE DEPENDENCE; THERMAL STRESSES

Citation Formats

Goldman, E. I., Kukharskaya, N. F., Narishkina, V. G., and Chucheva, G. V., E-mail: gvc@ms.ire.rssi.ru. Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide. United States: N. p., 2011. Web. doi:10.1134/S1063782611070098.
Goldman, E. I., Kukharskaya, N. F., Narishkina, V. G., & Chucheva, G. V., E-mail: gvc@ms.ire.rssi.ru. Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide. United States. doi:10.1134/S1063782611070098.
Goldman, E. I., Kukharskaya, N. F., Narishkina, V. G., and Chucheva, G. V., E-mail: gvc@ms.ire.rssi.ru. Fri . "Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide". United States. doi:10.1134/S1063782611070098.
@article{osti_22004771,
title = {Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide},
author = {Goldman, E. I. and Kukharskaya, N. F. and Narishkina, V. G. and Chucheva, G. V., E-mail: gvc@ms.ire.rssi.ru},
abstractNote = {Formation of centers of electron-hole pair generation near the silicon-oxide interface under field and thermal effects on Si-MOS structures with ultrathin oxide and poststress annihilation of these structures are studied. Concentrations of generation centers of minority charge carriers (holes) are determined from experimental dynamic current-voltage characteristics of Si-MOS diodes by fixing the accumulation duration of the equilibrium hole density near the surface separating the semiconductor and insulator during the sample transition from a deep depletion state to a pronounced inversion state. It is shown that MOS structures with ultrathin oxide are much more 'pliable' to field and thermal stresses in comparison with samples with thick a insulating layer: objects with ultrathin oxide are more easily damaged by external stresses, but more rapidly recover to the initial state at room temperature.},
doi = {10.1134/S1063782611070098},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 45,
place = {United States},
year = {2011},
month = {7}
}