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Title: Effect of AlGaAs-(AlGa){sub x}O{sub y} pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

Abstract

Effect of parameters of the AlGaAs-(AlGa){sub x}O{sub y} layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quantum dots on specific features of the emission spectrum at a temperature of 15 K under optical excitation has been studied. A decrease in the oxidation depth of the Al{sub 0.97}Ga{sub 0.03}As layer results in a decrease in the intensity of 'whispering gallery mode' lines; simultaneously, the lasing threshold becomes higher and the Q factor is diminished by increased leakages into the substrate region.

Authors:
; ; ; ; ;  [1]; ; ;  [2];  [3]
  1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
  3. Technische Universitaet, Institut fuer Festkoerperphysik (Germany)
Publication Date:
OSTI Identifier:
22004767
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 7; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALGAE; ALUMINIUM ARSENIDES; EMISSION SPECTRA; EXCITATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASERS; LAYERS; LEAKS; OXIDATION; QUANTUM DOTS; SUBSTRATES

Citation Formats

Kryzhanovskaya, N. V., E-mail: kryj@mail.ioffe.ru, Blokhin, S. A., Maximov, M. V., Nadtochy, A. M., Zhukov, A. E., Fedorova, K. V., Ledentsov, N. N., Ustinov, V. M., Il'inskaya, N. D., and Bimberg, D. Effect of AlGaAs-(AlGa){sub x}O{sub y} pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots. United States: N. p., 2011. Web. doi:10.1134/S1063782611070116.
Kryzhanovskaya, N. V., E-mail: kryj@mail.ioffe.ru, Blokhin, S. A., Maximov, M. V., Nadtochy, A. M., Zhukov, A. E., Fedorova, K. V., Ledentsov, N. N., Ustinov, V. M., Il'inskaya, N. D., & Bimberg, D. Effect of AlGaAs-(AlGa){sub x}O{sub y} pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots. United States. doi:10.1134/S1063782611070116.
Kryzhanovskaya, N. V., E-mail: kryj@mail.ioffe.ru, Blokhin, S. A., Maximov, M. V., Nadtochy, A. M., Zhukov, A. E., Fedorova, K. V., Ledentsov, N. N., Ustinov, V. M., Il'inskaya, N. D., and Bimberg, D. Fri . "Effect of AlGaAs-(AlGa){sub x}O{sub y} pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots". United States. doi:10.1134/S1063782611070116.
@article{osti_22004767,
title = {Effect of AlGaAs-(AlGa){sub x}O{sub y} pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots},
author = {Kryzhanovskaya, N. V., E-mail: kryj@mail.ioffe.ru and Blokhin, S. A. and Maximov, M. V. and Nadtochy, A. M. and Zhukov, A. E. and Fedorova, K. V. and Ledentsov, N. N. and Ustinov, V. M. and Il'inskaya, N. D. and Bimberg, D.},
abstractNote = {Effect of parameters of the AlGaAs-(AlGa){sub x}O{sub y} layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quantum dots on specific features of the emission spectrum at a temperature of 15 K under optical excitation has been studied. A decrease in the oxidation depth of the Al{sub 0.97}Ga{sub 0.03}As layer results in a decrease in the intensity of 'whispering gallery mode' lines; simultaneously, the lasing threshold becomes higher and the Q factor is diminished by increased leakages into the substrate region.},
doi = {10.1134/S1063782611070116},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 45,
place = {United States},
year = {2011},
month = {7}
}