Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties
- Russian Academy of Sciences, Institute for Analytical Instrumentation (Russian Federation)
- Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)
A method for the formation of single GaAs semiconductor nanowhiskers and their assemblies on the tip of a chemically etched tungsten needle by molecular-beam epitaxy is proposed. The focused-ionbeam technique was used to separate a single nanowhisker. Electronic properties of single nanowhiskers were studied by elastic tunneling spectroscopy in ultrahigh vacuum. The band gap and the doping level of GaAs whiskers were determined using the current-voltage characteristics obtained from these measurements.
- OSTI ID:
- 22004756
- Journal Information:
- Semiconductors, Vol. 45, Issue 8; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth Of Single Crystalline Copper Nanowhiskers
The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy
Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer
Journal Article
·
Wed Nov 24 00:00:00 EST 2010
· AIP Conference Proceedings
·
OSTI ID:22004756
The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy
Journal Article
·
Sun May 15 00:00:00 EDT 2005
· Semiconductors
·
OSTI ID:22004756
+4 more
Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer
Journal Article
·
Sat May 15 00:00:00 EDT 2010
· Semiconductors
·
OSTI ID:22004756
+1 more