skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Photoluminescence in silicon implanted with silicon ions at amorphizing doses

Abstract

Luminescent and structural properties of n-FZ-Si and n-Cz-Si implanted with Si ions at amorphizing doses and annealed at 1100 Degree-Sign C in a chlorine-containing atmosphere have been studied. An analysis of proton Rutherford backscattering spectra of implanted samples demonstrated that an amorphous layer is formed, and its position and thickness depend on the implantation dose. An X-ray diffraction analysis revealed that defects of the interstitial type are formed in the samples upon annealing. Photoluminescence spectra measured at 78 K and low excitation levels are dominated by the dislocation-related line D1, which is also observed at 300 K. The peak position of this line, its full width at half-maximum, and intensity depend on the conduction type of Si and implantation dose. As the luminescence excitation power is raised, a continuous band appears in the spectrum. A model is suggested that explains the fundamental aspects of the behavior of the photoluminescence spectra in relation to the experimental conditions.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
  2. Lobachevsky State University, Physicotechnical Research Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22004745
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHLORINE; DEFECTS; DISLOCATIONS; DOSES; EXCITATION; LAYERS; PEAKS; PHOTOLUMINESCENCE; PROTONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SILICON IONS; SPECTRA; X-RAY DIFFRACTION

Citation Formats

Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E., Kyutt, R. N., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Afrosimov, V. V., and Tetel'baum, D. I. Photoluminescence in silicon implanted with silicon ions at amorphizing doses. United States: N. p., 2011. Web. doi:10.1134/S1063782611090181.
Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E., Kyutt, R. N., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Afrosimov, V. V., & Tetel'baum, D. I. Photoluminescence in silicon implanted with silicon ions at amorphizing doses. United States. doi:10.1134/S1063782611090181.
Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E., Kyutt, R. N., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Afrosimov, V. V., and Tetel'baum, D. I. Thu . "Photoluminescence in silicon implanted with silicon ions at amorphizing doses". United States. doi:10.1134/S1063782611090181.
@article{osti_22004745,
title = {Photoluminescence in silicon implanted with silicon ions at amorphizing doses},
author = {Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru and Kalyadin, A. E. and Kyutt, R. N. and Sakharov, V. I. and Serenkov, I. T. and Shek, E. I. and Afrosimov, V. V. and Tetel'baum, D. I.},
abstractNote = {Luminescent and structural properties of n-FZ-Si and n-Cz-Si implanted with Si ions at amorphizing doses and annealed at 1100 Degree-Sign C in a chlorine-containing atmosphere have been studied. An analysis of proton Rutherford backscattering spectra of implanted samples demonstrated that an amorphous layer is formed, and its position and thickness depend on the implantation dose. An X-ray diffraction analysis revealed that defects of the interstitial type are formed in the samples upon annealing. Photoluminescence spectra measured at 78 K and low excitation levels are dominated by the dislocation-related line D1, which is also observed at 300 K. The peak position of this line, its full width at half-maximum, and intensity depend on the conduction type of Si and implantation dose. As the luminescence excitation power is raised, a continuous band appears in the spectrum. A model is suggested that explains the fundamental aspects of the behavior of the photoluminescence spectra in relation to the experimental conditions.},
doi = {10.1134/S1063782611090181},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 45,
place = {United States},
year = {2011},
month = {9}
}