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Title: Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons

Abstract

Carrier removal rate (V{sub d}) in p-6H-SiC in its irradiation with 8-MeV protons has been studied. The p-6H-SiC samples were produced by sublimation in vacuum. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that complete compensation of samples with initial value of N{sub a} - N{sub d} Almost-Equal-To 1.5 Multiplication-Sign 10{sup 18} cm{sup -3} occurs at an irradiation dose of {approx}1.1 Multiplication-Sign 10{sup 16} cm{sup -2}. In this case, the carrier removal rate was {approx}130 cm{sup -1}.

Authors:
 [1];  [2]; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
  2. St. Petersburg State Polytechnic University (Russian Federation)
Publication Date:
OSTI Identifier:
22004744
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITANCE; HALL EFFECT; IRRADIATION; PROTONS; RADIATION DOSES; SILICON CARBIDES; SUBLIMATION

Citation Formats

Lebedev, A. A., E-mail: Shura.Lebe@mail.ioffe.ru, Kozlovski, V. V., Belov, S. V., Bogdanova, E. V., and Oganesyan, G. A. Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons. United States: N. p., 2011. Web. doi:10.1134/S1063782611090144.
Lebedev, A. A., E-mail: Shura.Lebe@mail.ioffe.ru, Kozlovski, V. V., Belov, S. V., Bogdanova, E. V., & Oganesyan, G. A. Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons. United States. doi:10.1134/S1063782611090144.
Lebedev, A. A., E-mail: Shura.Lebe@mail.ioffe.ru, Kozlovski, V. V., Belov, S. V., Bogdanova, E. V., and Oganesyan, G. A. Thu . "Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons". United States. doi:10.1134/S1063782611090144.
@article{osti_22004744,
title = {Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons},
author = {Lebedev, A. A., E-mail: Shura.Lebe@mail.ioffe.ru and Kozlovski, V. V. and Belov, S. V. and Bogdanova, E. V. and Oganesyan, G. A.},
abstractNote = {Carrier removal rate (V{sub d}) in p-6H-SiC in its irradiation with 8-MeV protons has been studied. The p-6H-SiC samples were produced by sublimation in vacuum. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that complete compensation of samples with initial value of N{sub a} - N{sub d} Almost-Equal-To 1.5 Multiplication-Sign 10{sup 18} cm{sup -3} occurs at an irradiation dose of {approx}1.1 Multiplication-Sign 10{sup 16} cm{sup -2}. In this case, the carrier removal rate was {approx}130 cm{sup -1}.},
doi = {10.1134/S1063782611090144},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 45,
place = {United States},
year = {2011},
month = {9}
}