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Title: Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface

Abstract

Comparative analysis of the influence of thermal annealing on Ge/Au/Ni-, Ge/Au/Ti/Au-, and Ge/Au/Ni/Ti/Au-based ohmic contacts and Ti/Au-based Schottky contacts deposited on an n-GaAs (100) surface treated and nontreated in (NH{sub 4}){sub 2}S aqueous solution have been performed. Annealing conditions for ohmic contacts are found that lead to a decrease in the specific contact resistance of sulfur-treated samples by a factor of 2.5-15 in comparison with the nontreated samples. Optimal annealing conditions are also determined for sulfur-treated GaAs samples with Schottky contacts, which make it possible to reduce the ideality factor and increase the barrier height and the breakdown voltage with respect to the nontreated samples.

Authors:
 [1];  [2]
  1. Micran Research and Production Company (Russian Federation)
  2. OOO Submicron Technologies (Russian Federation)
Publication Date:
OSTI Identifier:
22004743
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; AQUEOUS SOLUTIONS; BREAKDOWN; ELECTRIC CONTACTS; GALLIUM ARSENIDES; SULFUR; SURFACES

Citation Formats

Erofeev, E. V., and Kagadei, V. A., E-mail: vak@micran.ru. Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface. United States: N. p., 2011. Web. doi:10.1134/S1063782611090065.
Erofeev, E. V., & Kagadei, V. A., E-mail: vak@micran.ru. Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface. United States. doi:10.1134/S1063782611090065.
Erofeev, E. V., and Kagadei, V. A., E-mail: vak@micran.ru. Thu . "Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface". United States. doi:10.1134/S1063782611090065.
@article{osti_22004743,
title = {Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface},
author = {Erofeev, E. V. and Kagadei, V. A., E-mail: vak@micran.ru},
abstractNote = {Comparative analysis of the influence of thermal annealing on Ge/Au/Ni-, Ge/Au/Ti/Au-, and Ge/Au/Ni/Ti/Au-based ohmic contacts and Ti/Au-based Schottky contacts deposited on an n-GaAs (100) surface treated and nontreated in (NH{sub 4}){sub 2}S aqueous solution have been performed. Annealing conditions for ohmic contacts are found that lead to a decrease in the specific contact resistance of sulfur-treated samples by a factor of 2.5-15 in comparison with the nontreated samples. Optimal annealing conditions are also determined for sulfur-treated GaAs samples with Schottky contacts, which make it possible to reduce the ideality factor and increase the barrier height and the breakdown voltage with respect to the nontreated samples.},
doi = {10.1134/S1063782611090065},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 45,
place = {United States},
year = {2011},
month = {9}
}