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Title: Optical properties of quantum-confined heterostructures based on GaP{sub x}N{sub y}As{sub 1-x-y} alloys

Abstract

The results of calculations of the band gap in GaP{sub x}N{sub y}As{sub 1-x-y} alloys and the estimated parameter of hybridization of the conduction band in GaP and the localized level of nitrogen are reported. The optical properties of quantum-confined heterostructures based on GaP{sub x}N{sub y}As{sub 1-x-y} alloys synthesized on the GaP (100) substrate surface are studied by photoluminescence measurements in the temperature range of 15-300 K. The heterostructures consist of GaP{sub 0.814}N{sub 0.006}As{sub 0.18} quantum wells separated by GaP barrier layers. The well width and the barrier thickness are 5 nm. Heterostructures with different numbers of periods are considered. On optical excitation of the structures, an intense photoluminescence line is observed in the spectral range 620-650 nm. The photoluminescence spectra of the GaP{sub 0.814}N{sub 0.006}As{sub 0.18}/GaP quantum wells are profoundly broadened because of the inhomogeneity of the quaternary alloy in composition. It is established that the increase in the number of quantum well layers from 10 to 25 does not results in degradation of the photoluminescence properties of the heterostructures. The results of the study support the view that it is possible to produce efficient optoelectronic devices on the basis of GaP{sub x}N{sub y}As{sub 1-x-y} alloys.

Authors:
 [1];  [2];  [1]
  1. Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Center for Research and Education (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22004740
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; EQUIPMENT; EXCITATION; GALLIUM PHOSPHIDES; HYBRIDIZATION; LAYERS; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; QUATERNARY ALLOY SYSTEMS; SPECTRA; SUBSTRATES; SURFACES; THICKNESS

Citation Formats

Egorov, A. Yu., Kryzhanovskaya, N. V., E-mail: kryj@mail.ioffe.ru, and Sobolev, M. S. Optical properties of quantum-confined heterostructures based on GaP{sub x}N{sub y}As{sub 1-x-y} alloys. United States: N. p., 2011. Web. doi:10.1134/S1063782611090041.
Egorov, A. Yu., Kryzhanovskaya, N. V., E-mail: kryj@mail.ioffe.ru, & Sobolev, M. S. Optical properties of quantum-confined heterostructures based on GaP{sub x}N{sub y}As{sub 1-x-y} alloys. United States. doi:10.1134/S1063782611090041.
Egorov, A. Yu., Kryzhanovskaya, N. V., E-mail: kryj@mail.ioffe.ru, and Sobolev, M. S. Thu . "Optical properties of quantum-confined heterostructures based on GaP{sub x}N{sub y}As{sub 1-x-y} alloys". United States. doi:10.1134/S1063782611090041.
@article{osti_22004740,
title = {Optical properties of quantum-confined heterostructures based on GaP{sub x}N{sub y}As{sub 1-x-y} alloys},
author = {Egorov, A. Yu. and Kryzhanovskaya, N. V., E-mail: kryj@mail.ioffe.ru and Sobolev, M. S.},
abstractNote = {The results of calculations of the band gap in GaP{sub x}N{sub y}As{sub 1-x-y} alloys and the estimated parameter of hybridization of the conduction band in GaP and the localized level of nitrogen are reported. The optical properties of quantum-confined heterostructures based on GaP{sub x}N{sub y}As{sub 1-x-y} alloys synthesized on the GaP (100) substrate surface are studied by photoluminescence measurements in the temperature range of 15-300 K. The heterostructures consist of GaP{sub 0.814}N{sub 0.006}As{sub 0.18} quantum wells separated by GaP barrier layers. The well width and the barrier thickness are 5 nm. Heterostructures with different numbers of periods are considered. On optical excitation of the structures, an intense photoluminescence line is observed in the spectral range 620-650 nm. The photoluminescence spectra of the GaP{sub 0.814}N{sub 0.006}As{sub 0.18}/GaP quantum wells are profoundly broadened because of the inhomogeneity of the quaternary alloy in composition. It is established that the increase in the number of quantum well layers from 10 to 25 does not results in degradation of the photoluminescence properties of the heterostructures. The results of the study support the view that it is possible to produce efficient optoelectronic devices on the basis of GaP{sub x}N{sub y}As{sub 1-x-y} alloys.},
doi = {10.1134/S1063782611090041},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 45,
place = {United States},
year = {2011},
month = {9}
}