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Title: XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates

Abstract

The differences in the electronic structure and composition of porous silicon samples obtained under identical conditions of electrochemical etching on the most commonly used n- and p-type substrates with different conductivities are demonstrated by X-ray absorption near-edge spectroscopy (XANES) and Fourier transform IR spectroscopy (FTIR) methods. It is shown that significantly higher oxidation and saturation with hydrogen is observed for the porous layer on n-type substrates.

Authors:
; ;  [1]; ;  [2]
  1. Voronezh State University (Russian Federation)
  2. LETI St. Petersburg State Electrotechnical University (Russian Federation)
Publication Date:
OSTI Identifier:
22004736
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ABSORPTION SPECTROSCOPY; CHEMICAL COMPOSITION; ELECTRONIC STRUCTURE; FOURIER TRANSFORMATION; INFRARED SPECTRA; LAYERS; OXIDATION; POROUS MATERIALS; SILICON; SUBSTRATES; X RADIATION; X-RAY SPECTROSCOPY

Citation Formats

Lenshin, A. S., E-mail: lenshinas@phys.vsu.ru, Kashkarov, V. M., Seredin, P. V., Spivak, Yu. M., and Moshnikov, V. A. XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates. United States: N. p., 2011. Web. doi:10.1134/S1063782611090168.
Lenshin, A. S., E-mail: lenshinas@phys.vsu.ru, Kashkarov, V. M., Seredin, P. V., Spivak, Yu. M., & Moshnikov, V. A. XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates. United States. doi:10.1134/S1063782611090168.
Lenshin, A. S., E-mail: lenshinas@phys.vsu.ru, Kashkarov, V. M., Seredin, P. V., Spivak, Yu. M., and Moshnikov, V. A. Thu . "XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates". United States. doi:10.1134/S1063782611090168.
@article{osti_22004736,
title = {XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates},
author = {Lenshin, A. S., E-mail: lenshinas@phys.vsu.ru and Kashkarov, V. M. and Seredin, P. V. and Spivak, Yu. M. and Moshnikov, V. A.},
abstractNote = {The differences in the electronic structure and composition of porous silicon samples obtained under identical conditions of electrochemical etching on the most commonly used n- and p-type substrates with different conductivities are demonstrated by X-ray absorption near-edge spectroscopy (XANES) and Fourier transform IR spectroscopy (FTIR) methods. It is shown that significantly higher oxidation and saturation with hydrogen is observed for the porous layer on n-type substrates.},
doi = {10.1134/S1063782611090168},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 45,
place = {United States},
year = {2011},
month = {9}
}