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Title: An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT

Abstract

A new nonlinear expression of Fermi-level variation with two-dimensional electron gas density in a high electron mobility has been proposed. It was found that our expression has a better fit with the numerical results. And, an analytical expression for n{sub s} in terms of the applied gate voltage is developed. Comparing with other previous approximations, the solutions of our expression has a better agreement with the exact numerical results over the entire range of interest. Besides, the solutions of our expression of n{sub s} versus V{sub G} are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.

Authors:
; ;  [1]
  1. University of Electronic Science and Technology of China, Department of Applied Physics (China)
Publication Date:
OSTI Identifier:
22004733
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; APPROXIMATIONS; CONTROL; DENSITY; ELECTRON GAS; FERMI LEVEL; GALLIUM NITRIDES; NONLINEAR PROBLEMS; POLYNOMIALS

Citation Formats

Pu Jinrong, Sun Jiuxun, E-mail: sjx@uestc.edu.cn, and Zhang Da. An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT. United States: N. p., 2011. Web. doi:10.1134/S1063782611090107.
Pu Jinrong, Sun Jiuxun, E-mail: sjx@uestc.edu.cn, & Zhang Da. An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT. United States. doi:10.1134/S1063782611090107.
Pu Jinrong, Sun Jiuxun, E-mail: sjx@uestc.edu.cn, and Zhang Da. Thu . "An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT". United States. doi:10.1134/S1063782611090107.
@article{osti_22004733,
title = {An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT},
author = {Pu Jinrong and Sun Jiuxun, E-mail: sjx@uestc.edu.cn and Zhang Da},
abstractNote = {A new nonlinear expression of Fermi-level variation with two-dimensional electron gas density in a high electron mobility has been proposed. It was found that our expression has a better fit with the numerical results. And, an analytical expression for n{sub s} in terms of the applied gate voltage is developed. Comparing with other previous approximations, the solutions of our expression has a better agreement with the exact numerical results over the entire range of interest. Besides, the solutions of our expression of n{sub s} versus V{sub G} are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.},
doi = {10.1134/S1063782611090107},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 45,
place = {United States},
year = {2011},
month = {9}
}