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Title: Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

Abstract

In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

Authors:
 [1];  [2];  [3]
  1. National Kaohsiung Normal University, Department of Electronic Engineering, Taiwan (China)
  2. Air Force Academy, Department of Electronic Engineering, Taiwan (China)
  3. National Taiwan Ocean University, Department of Electrical Engineering, Taiwan (China)
Publication Date:
OSTI Identifier:
22004730
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 9; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; DOPED MATERIALS; EQUIPMENT; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; GASES

Citation Formats

Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw, Guo, Der-Feng, and Lour, Wen-Shiung. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles. United States: N. p., 2011. Web. doi:10.1134/S1063782611090211.
Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw, Guo, Der-Feng, & Lour, Wen-Shiung. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles. United States. doi:10.1134/S1063782611090211.
Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw, Guo, Der-Feng, and Lour, Wen-Shiung. Thu . "Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles". United States. doi:10.1134/S1063782611090211.
@article{osti_22004730,
title = {Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles},
author = {Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw and Guo, Der-Feng and Lour, Wen-Shiung},
abstractNote = {In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.},
doi = {10.1134/S1063782611090211},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 45,
place = {United States},
year = {2011},
month = {9}
}