Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in silicon nanostructures

Journal Article · Tue Nov 15 00:00:00 EST 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611110030· OSTI ID:22004703

Brilinskaya, E S ^[1]; Gets, D S; Klyachkin, L E; Malyarenko, A M ^[2]; Romanov, V V ^[1]

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1. St. Petersburg State Polytechnical University (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

The dependences of the longitudinal resistance and the static magnetic susceptibility on the magnetic field applied perpendicularly to the plane of an ultranarrow silicon quantum well confined by {delta} barriers heavily doped with boron demonstrate the high-temperature Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in low magnetic fields. The results are indicative of the implementation of the high-field approximation {mu}B Much-Greater-Than 1 under these conditions due to the small effective mass of two-dimensional heavy holes, which is confirmed by measurements of temperature dependences of the de-Haas-van-Alphen oscillations.

• OSTI ID: 22004703
• Journal Information: Semiconductors, Vol. 45, Issue 11; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
APPROXIMATIONS
DOPED MATERIALS
EFFECTIVE MASS
MAGNETIC FIELDS
MAGNETIC SUSCEPTIBILITY
OSCILLATIONS
QUANTUM WELLS
SILICON
TEMPERATURE DEPENDENCE