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Title: Dependence of carrier mobility on an electric field in gallium selenide crystals

Abstract

The dependence of the mobility of charge carriers on voltage has been studied in undoped GaSe single crystals and crystals doped with gadolinium; the latter crystals have exhibited various values of dark resistivity ({rho}{sub d.r} Almost-Equal-To 10{sup 4}-10{sup 8} {Omega} cm at 77 K) and of the doping level (N = 10{sup -5}, 10{sup -4}, 10{sup -3}, 10{sup -2}, and 10{sup -1} at %). It is established that the dependence of the charge-carrier mobility on the electric field applied to the sample E {<=} 10{sup 2} V/cm is observed in undoped high-resistivity GaSe crystals ({rho}{sub d.r} {>=} 10{sup 4} {Omega} cm) and in lightly doped GaSe crystals (N {<=} 10{sup -2} at %) in the region of T {<=} 150 K. It is found that this dependence is not related to heating of the charge carriers by an electric field; rather, it is caused by elimination of drift barriers as a result of injection.

Authors:
; ;  [1]
  1. Baku State University (Azerbaijan)
Publication Date:
OSTI Identifier:
22004666
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 46; Journal Issue: 6; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER MOBILITY; CHARGE CARRIERS; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GADOLINIUM; GALLIUM; GALLIUM SELENIDES; HEATING; INJECTION; MONOCRYSTALS

Citation Formats

Abdinov, A. Sh., E-mail: abdinov_axmed@yahoo.com, Babaeva, R. F., E-mail: Babaeva-Rena@yandex.ru, and Rzayev, R. M. Dependence of carrier mobility on an electric field in gallium selenide crystals. United States: N. p., 2012. Web. doi:10.1134/S1063782612060024.
Abdinov, A. Sh., E-mail: abdinov_axmed@yahoo.com, Babaeva, R. F., E-mail: Babaeva-Rena@yandex.ru, & Rzayev, R. M. Dependence of carrier mobility on an electric field in gallium selenide crystals. United States. doi:10.1134/S1063782612060024.
Abdinov, A. Sh., E-mail: abdinov_axmed@yahoo.com, Babaeva, R. F., E-mail: Babaeva-Rena@yandex.ru, and Rzayev, R. M. Fri . "Dependence of carrier mobility on an electric field in gallium selenide crystals". United States. doi:10.1134/S1063782612060024.
@article{osti_22004666,
title = {Dependence of carrier mobility on an electric field in gallium selenide crystals},
author = {Abdinov, A. Sh., E-mail: abdinov_axmed@yahoo.com and Babaeva, R. F., E-mail: Babaeva-Rena@yandex.ru and Rzayev, R. M.},
abstractNote = {The dependence of the mobility of charge carriers on voltage has been studied in undoped GaSe single crystals and crystals doped with gadolinium; the latter crystals have exhibited various values of dark resistivity ({rho}{sub d.r} Almost-Equal-To 10{sup 4}-10{sup 8} {Omega} cm at 77 K) and of the doping level (N = 10{sup -5}, 10{sup -4}, 10{sup -3}, 10{sup -2}, and 10{sup -1} at %). It is established that the dependence of the charge-carrier mobility on the electric field applied to the sample E {<=} 10{sup 2} V/cm is observed in undoped high-resistivity GaSe crystals ({rho}{sub d.r} {>=} 10{sup 4} {Omega} cm) and in lightly doped GaSe crystals (N {<=} 10{sup -2} at %) in the region of T {<=} 150 K. It is found that this dependence is not related to heating of the charge carriers by an electric field; rather, it is caused by elimination of drift barriers as a result of injection.},
doi = {10.1134/S1063782612060024},
journal = {Semiconductors},
issn = {1063-7826},
number = 6,
volume = 46,
place = {United States},
year = {2012},
month = {6}
}