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Title: Photosensitive Ox/GaAs heterojunctions: Creation and properties

Abstract

A method for the thermal oxidation of GaAs crystals in air is suggested and the first photosensitive Ox/n-GaAs heterojunctions, where Ox is a native oxide, are fabricated. The steady current-voltage characteristics and spectra of relative quantum efficiency of the new structures are studied. The features of the spectra of photoactive absorption of the obtained heterojunctions are discussed. The potential of using vacuumfree thermal oxidation of the GaAs crystals in air to fabricate broadband heterophotoconverters of optical radiation on their basis is established.

Authors:
 [1]; ; ;  [2]
  1. St. Petersburg State Polytechnical University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22004658
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 46; Journal Issue: 6; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; CRYSTALS; GALLIUM ARSENIDES; HETEROJUNCTIONS; OXIDATION; OXIDES; QUANTUM EFFICIENCY; SPECTRA

Citation Formats

Rud', V. Yu., Rud', Yu. V., E-mail: yuryrud@mail.ioffe.ru, Terukov, E. I., and Ushakova, T. N. Photosensitive Ox/GaAs heterojunctions: Creation and properties. United States: N. p., 2012. Web. doi:10.1134/S1063782612060164.
Rud', V. Yu., Rud', Yu. V., E-mail: yuryrud@mail.ioffe.ru, Terukov, E. I., & Ushakova, T. N. Photosensitive Ox/GaAs heterojunctions: Creation and properties. United States. doi:10.1134/S1063782612060164.
Rud', V. Yu., Rud', Yu. V., E-mail: yuryrud@mail.ioffe.ru, Terukov, E. I., and Ushakova, T. N. Fri . "Photosensitive Ox/GaAs heterojunctions: Creation and properties". United States. doi:10.1134/S1063782612060164.
@article{osti_22004658,
title = {Photosensitive Ox/GaAs heterojunctions: Creation and properties},
author = {Rud', V. Yu. and Rud', Yu. V., E-mail: yuryrud@mail.ioffe.ru and Terukov, E. I. and Ushakova, T. N.},
abstractNote = {A method for the thermal oxidation of GaAs crystals in air is suggested and the first photosensitive Ox/n-GaAs heterojunctions, where Ox is a native oxide, are fabricated. The steady current-voltage characteristics and spectra of relative quantum efficiency of the new structures are studied. The features of the spectra of photoactive absorption of the obtained heterojunctions are discussed. The potential of using vacuumfree thermal oxidation of the GaAs crystals in air to fabricate broadband heterophotoconverters of optical radiation on their basis is established.},
doi = {10.1134/S1063782612060164},
journal = {Semiconductors},
issn = {1063-7826},
number = 6,
volume = 46,
place = {United States},
year = {2012},
month = {6}
}