Effect of diffusion from a lateral surface on the rate of GaN nanowire growth

Journal Article · Fri Jun 15 00:00:00 EDT 2012 · Semiconductors

DOI:https://doi.org/10.1134/S1063782612060218· OSTI ID:22004652

Tchernycheva, M; Cirlin, G E ^[1]; Patriarche, G; Harmand, J C ^[2]; Dubrovskii, V G ^[1]

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1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation)
2. CNRS-LPN (France)

The kinetics of the growth of GaN crystalline nanowires on a Si (111) surface with no catalyst is studied experimentally and theoretically. Noncatalytic GaN nanowires were grown by molecular-beam epitaxy with AlN inserts, which makes it possible to determine the rate of the vertical growth of nanowires. A model for the formation of GaN nanowires is developed, and an expression for their rate of growth is derived. It is shown that, in the general case, the dependence of the rate of growth on the nanowire diameter has a minimum. The diameter corresponding to the experimentally observed minimum of the rate of growth steadily increases with increasing diffusion flux from the lateral surface.

• OSTI ID: 22004652
• Journal Information: Semiconductors, Vol. 46, Issue 6; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CATALYSTS
DIFFUSION
GALLIUM NITRIDES
KINETICS
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
SURFACES
WIRES