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Title: Evolution of temperature dependent properties of oriented YBaCo{sub 4}O{sub 7} thin films

Abstract

Bulk YBaCo{sub 4}O{sub 7} was synthesized using a ceramic route in air. Thin films of this compound were grown on (100) oriented LaAlO{sub 3} substrate using a Pulsed Laser Deposition technique. X-ray diffraction results of thin film indicate that the film has (110) orientation. Electrical resistivity measurements, in 300K to 100K temperature range showed that the film is insulating, similar to that of the bulk. Spectroscopic ellipsometric measurements on thin films in the energy range 1.5 to 5 eV and at temperatures from 300 K to 400 K showed that the direct band gap s 2.45 eV at ambient temperature while its value increases with increase in temperature. The increase in band gap with temperature is attributed to the Moss-Burstein effect.

Authors:
; ; ; ; ; ;  [1]
  1. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, TN (India)
Publication Date:
OSTI Identifier:
22004156
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ALUMINATES; AMBIENT TEMPERATURE; BARIUM COMPOUNDS; CERAMICS; COPPER OXIDES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; ENERGY BEAM DEPOSITION; ENERGY GAP; EV RANGE; LANTHANUM COMPOUNDS; LASER RADIATION; PULSED IRRADIATION; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Nithya, R., Sundari, S. Tripura, Kumary, T. Geetha, Chandra, Sharat, Mani, Awadhesh, Dash, S., and Sastry, V. Sankara. Evolution of temperature dependent properties of oriented YBaCo{sub 4}O{sub 7} thin films. United States: N. p., 2012. Web. doi:10.1063/1.4710309.
Nithya, R., Sundari, S. Tripura, Kumary, T. Geetha, Chandra, Sharat, Mani, Awadhesh, Dash, S., & Sastry, V. Sankara. Evolution of temperature dependent properties of oriented YBaCo{sub 4}O{sub 7} thin films. United States. doi:10.1063/1.4710309.
Nithya, R., Sundari, S. Tripura, Kumary, T. Geetha, Chandra, Sharat, Mani, Awadhesh, Dash, S., and Sastry, V. Sankara. Tue . "Evolution of temperature dependent properties of oriented YBaCo{sub 4}O{sub 7} thin films". United States. doi:10.1063/1.4710309.
@article{osti_22004156,
title = {Evolution of temperature dependent properties of oriented YBaCo{sub 4}O{sub 7} thin films},
author = {Nithya, R. and Sundari, S. Tripura and Kumary, T. Geetha and Chandra, Sharat and Mani, Awadhesh and Dash, S. and Sastry, V. Sankara},
abstractNote = {Bulk YBaCo{sub 4}O{sub 7} was synthesized using a ceramic route in air. Thin films of this compound were grown on (100) oriented LaAlO{sub 3} substrate using a Pulsed Laser Deposition technique. X-ray diffraction results of thin film indicate that the film has (110) orientation. Electrical resistivity measurements, in 300K to 100K temperature range showed that the film is insulating, similar to that of the bulk. Spectroscopic ellipsometric measurements on thin films in the energy range 1.5 to 5 eV and at temperatures from 300 K to 400 K showed that the direct band gap s 2.45 eV at ambient temperature while its value increases with increase in temperature. The increase in band gap with temperature is attributed to the Moss-Burstein effect.},
doi = {10.1063/1.4710309},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}