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Title: Strain and mosaic deformation in laser irradiated silicon

Abstract

The effect of moderately intense ({approx}GWcm{sup -2} The effect of moderately intense ({approx}GWcm-2), 200 ps laser pulse irradiation on silicon single crystal is reported. The x-ray diffraction measurements performed on the irradiated samples reveal irreversible structural deformations. Raman spectroscopic measurements reveal substantial shift of the peak position as well as an overall broadening, pointing towards the presence of residual strain and formation of micromosaic structures on the laser induced shock recovered samples.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [2];  [2]
  1. UGC-DAE Consortium for Scientific Research, University Campus, Indore, MP, 452 001 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22004153
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFORMATION; MONOCRYSTALS; PULSED IRRADIATION; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SILICON; SPECTRAL SHIFT; STRAINS; X-RAY DIFFRACTION

Citation Formats

Gupta, Mukul, Arora, V., Bagchi, S., Gupta, Ajay, Chakera, J. A., Naik, P. A., Chaddah, P., Gupta, P. D., Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013, UGC-DAE Consortium for Scientific Research, University Campus, Indore, MP, 452 001, Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013, UGC-DAE Consortium for Scientific Research, University Campus, Indore, MP, 452 001, and Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013. Strain and mosaic deformation in laser irradiated silicon. United States: N. p., 2012. Web. doi:10.1063/1.4710238.
Gupta, Mukul, Arora, V., Bagchi, S., Gupta, Ajay, Chakera, J. A., Naik, P. A., Chaddah, P., Gupta, P. D., Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013, UGC-DAE Consortium for Scientific Research, University Campus, Indore, MP, 452 001, Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013, UGC-DAE Consortium for Scientific Research, University Campus, Indore, MP, 452 001, & Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013. Strain and mosaic deformation in laser irradiated silicon. United States. doi:10.1063/1.4710238.
Gupta, Mukul, Arora, V., Bagchi, S., Gupta, Ajay, Chakera, J. A., Naik, P. A., Chaddah, P., Gupta, P. D., Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013, UGC-DAE Consortium for Scientific Research, University Campus, Indore, MP, 452 001, Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013, UGC-DAE Consortium for Scientific Research, University Campus, Indore, MP, 452 001, and Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013. Tue . "Strain and mosaic deformation in laser irradiated silicon". United States. doi:10.1063/1.4710238.
@article{osti_22004153,
title = {Strain and mosaic deformation in laser irradiated silicon},
author = {Gupta, Mukul and Arora, V. and Bagchi, S. and Gupta, Ajay and Chakera, J. A. and Naik, P. A. and Chaddah, P. and Gupta, P. D. and Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013 and UGC-DAE Consortium for Scientific Research, University Campus, Indore, MP, 452 001 and Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013 and UGC-DAE Consortium for Scientific Research, University Campus, Indore, MP, 452 001 and Laser Plasma Division, Raja Ramanna Center for Advanced Technology, Indore, MP, 452 013},
abstractNote = {The effect of moderately intense ({approx}GWcm{sup -2} The effect of moderately intense ({approx}GWcm-2), 200 ps laser pulse irradiation on silicon single crystal is reported. The x-ray diffraction measurements performed on the irradiated samples reveal irreversible structural deformations. Raman spectroscopic measurements reveal substantial shift of the peak position as well as an overall broadening, pointing towards the presence of residual strain and formation of micromosaic structures on the laser induced shock recovered samples.},
doi = {10.1063/1.4710238},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}