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Title: Structural, electrical and optical properties of GaP codoped ZnO thin films

Abstract

The GaP codoped ZnO (GPZO) thin films of different concentrations (0, 1, 2 and 4 mol%) have been grown by RF magnetron sputtering to realize p-ZnO. The grown films on sapphire substrates have been characterized by X-ray diffraction (XRD), Hall measurement, photoluminescence (PL), and Energy dispersive spectroscopy (EDS). XRD studies reveal that all the films are preferentially oriented along (002) plane. Hall measurement shows that 2% GPZO film shows low resistivity (2.17 {Omega} cm) and high hole concentration (1.8 x 10{sup 18} cm{sup -3} due to optimum amount of P incorporation. EDS spectra confirms the presence of Ga and P in 2 mol% GPZO film.

Authors:
; ;  [1]
  1. Thin Film Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620015 (India)
Publication Date:
OSTI Identifier:
22004152
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; DEPOSITION; EMISSION SPECTROSCOPY; GALLIUM; GALLIUM PHOSPHIDES; HOLES; OPTICAL PROPERTIES; PHOSPHORUS; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Gowrishankar, S., Balakrishnan, L., and Gopalakrishnan, N. Structural, electrical and optical properties of GaP codoped ZnO thin films. United States: N. p., 2012. Web. doi:10.1063/1.4710231.
Gowrishankar, S., Balakrishnan, L., & Gopalakrishnan, N. Structural, electrical and optical properties of GaP codoped ZnO thin films. United States. doi:10.1063/1.4710231.
Gowrishankar, S., Balakrishnan, L., and Gopalakrishnan, N. Tue . "Structural, electrical and optical properties of GaP codoped ZnO thin films". United States. doi:10.1063/1.4710231.
@article{osti_22004152,
title = {Structural, electrical and optical properties of GaP codoped ZnO thin films},
author = {Gowrishankar, S. and Balakrishnan, L. and Gopalakrishnan, N.},
abstractNote = {The GaP codoped ZnO (GPZO) thin films of different concentrations (0, 1, 2 and 4 mol%) have been grown by RF magnetron sputtering to realize p-ZnO. The grown films on sapphire substrates have been characterized by X-ray diffraction (XRD), Hall measurement, photoluminescence (PL), and Energy dispersive spectroscopy (EDS). XRD studies reveal that all the films are preferentially oriented along (002) plane. Hall measurement shows that 2% GPZO film shows low resistivity (2.17 {Omega} cm) and high hole concentration (1.8 x 10{sup 18} cm{sup -3} due to optimum amount of P incorporation. EDS spectra confirms the presence of Ga and P in 2 mol% GPZO film.},
doi = {10.1063/1.4710231},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}