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Title: Realization of low resistive p-ZnO thin film by Al-As codoping

Abstract

Al-As codoping into ZnO has been proposed to realize low resistive and stable p-ZnO thin film by RF magnetron sputtering. Al-As codoping has been achieved by As back diffusion from GaAs substrate and sputtering Al doped ZnO target. Hall measurements showed that the hole concentration increases with the increase of Al concentration from 10{sup 15} to 10{sup 20} cm{sup -3}. Among the grown films, 1 at% Al doped ZnO: As showed low resistivity (3.5x10{sup -2}{Omega}cm) with high hole concentration. X-ray diffraction shows that all the films are crystallized in wurtzite structure with (002) preferential orientation. The diffusion of As atoms from the substrate and the presence of dopants in the film have been confirmed by Rutherford ford back scattering and energy dispersive spectroscopy analysis, respectively.

Authors:
; ;  [1]
  1. Thin Film Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620015 (India)
Publication Date:
OSTI Identifier:
22004150
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ALUMINIUM; ARSENIC; CRYSTAL GROWTH; CUBIC LATTICES; DEPOSITION; DIFFUSION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; HALL EFFECT; HOLES; ORIENTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Balakrishnan, L., Gowrishankar, S., and Gopalakrishnan, N. Realization of low resistive p-ZnO thin film by Al-As codoping. United States: N. p., 2012. Web. doi:10.1063/1.4710227.
Balakrishnan, L., Gowrishankar, S., & Gopalakrishnan, N. Realization of low resistive p-ZnO thin film by Al-As codoping. United States. doi:10.1063/1.4710227.
Balakrishnan, L., Gowrishankar, S., and Gopalakrishnan, N. Tue . "Realization of low resistive p-ZnO thin film by Al-As codoping". United States. doi:10.1063/1.4710227.
@article{osti_22004150,
title = {Realization of low resistive p-ZnO thin film by Al-As codoping},
author = {Balakrishnan, L. and Gowrishankar, S. and Gopalakrishnan, N.},
abstractNote = {Al-As codoping into ZnO has been proposed to realize low resistive and stable p-ZnO thin film by RF magnetron sputtering. Al-As codoping has been achieved by As back diffusion from GaAs substrate and sputtering Al doped ZnO target. Hall measurements showed that the hole concentration increases with the increase of Al concentration from 10{sup 15} to 10{sup 20} cm{sup -3}. Among the grown films, 1 at% Al doped ZnO: As showed low resistivity (3.5x10{sup -2}{Omega}cm) with high hole concentration. X-ray diffraction shows that all the films are crystallized in wurtzite structure with (002) preferential orientation. The diffusion of As atoms from the substrate and the presence of dopants in the film have been confirmed by Rutherford ford back scattering and energy dispersive spectroscopy analysis, respectively.},
doi = {10.1063/1.4710227},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}