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Title: SHI induced enhancement in conductivity of PbTe thin film for thermoelectric applications

Abstract

PbTe thin film were synthesized using thermal evaporation and irradiated by 100 MeV Ag ions at different fluences ranging from 3x10{sup 13} and 1x10{sup 14} ions/cm{sup 2}. Pristine films annealed under Ar atm at 250 deg. C for 1 hr. X-ray Diffraction (XRD) of pristine and irradiated films reveals the improvement of PbTe phase with increasing fluence. The thickness of the film is decreased from 195 nm to 150 nm after ion irradiation as indicated by Rutherford backscattering spectrometry (RBS) analysis due to the sputtering. Resistivity measurement using four probe techniques of these films shows the conductivity enhancement with ion fluence. The conductivity is found to be {approx} 6 fold at fluence 3x10{sup 13} ions/cm{sup 2} whereas it decreases to 3 fold after annealing in comparison to pristine sample. On further increasing the fluence from 3x10{sup 13} ions/cm{sup 2}, the properties of the film begin to deteriorate. SHI induced modification may be explained on the basis of oxygen desorption and change in stochiometry of film during irradiation.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [2];  [2];  [2]
  1. University School of Basic and Applied Sciences, GGS Indraprastha University, Dwarka, Delhi 110075 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22004149
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ANNEALING; COMPARATIVE EVALUATIONS; DESORPTION; ELECTRIC CONDUCTIVITY; ION BEAMS; IRRADIATION; LEAD TELLURIDES; MEV RANGE; MODIFICATIONS; PHYSICAL RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILVER IONS; SPUTTERING; THIN FILMS; VACUUM COATING; X-RAY DIFFRACTION

Citation Formats

Gupta, Srashti, Agarwal, D. C., Singh, J. P., Tripathi, S. K., Neeleshwar, S., Asokan, K., Panigrahi, B. K., Avasthi, D. K., Inter University Accelerator Centre, New Delhi-110067, Department of Physics, Panjab University, Chandigarh-160 014, University School of Basic and Applied Sciences, GGS Indraprastha University, Dwarka, Delhi 110075, Inter University Accelerator Centre, New Delhi-110067, Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, and Inter University Accelerator Centre, New Delhi-110067. SHI induced enhancement in conductivity of PbTe thin film for thermoelectric applications. United States: N. p., 2012. Web. doi:10.1063/1.4710225.
Gupta, Srashti, Agarwal, D. C., Singh, J. P., Tripathi, S. K., Neeleshwar, S., Asokan, K., Panigrahi, B. K., Avasthi, D. K., Inter University Accelerator Centre, New Delhi-110067, Department of Physics, Panjab University, Chandigarh-160 014, University School of Basic and Applied Sciences, GGS Indraprastha University, Dwarka, Delhi 110075, Inter University Accelerator Centre, New Delhi-110067, Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, & Inter University Accelerator Centre, New Delhi-110067. SHI induced enhancement in conductivity of PbTe thin film for thermoelectric applications. United States. doi:10.1063/1.4710225.
Gupta, Srashti, Agarwal, D. C., Singh, J. P., Tripathi, S. K., Neeleshwar, S., Asokan, K., Panigrahi, B. K., Avasthi, D. K., Inter University Accelerator Centre, New Delhi-110067, Department of Physics, Panjab University, Chandigarh-160 014, University School of Basic and Applied Sciences, GGS Indraprastha University, Dwarka, Delhi 110075, Inter University Accelerator Centre, New Delhi-110067, Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, and Inter University Accelerator Centre, New Delhi-110067. Tue . "SHI induced enhancement in conductivity of PbTe thin film for thermoelectric applications". United States. doi:10.1063/1.4710225.
@article{osti_22004149,
title = {SHI induced enhancement in conductivity of PbTe thin film for thermoelectric applications},
author = {Gupta, Srashti and Agarwal, D. C. and Singh, J. P. and Tripathi, S. K. and Neeleshwar, S. and Asokan, K. and Panigrahi, B. K. and Avasthi, D. K. and Inter University Accelerator Centre, New Delhi-110067 and Department of Physics, Panjab University, Chandigarh-160 014 and University School of Basic and Applied Sciences, GGS Indraprastha University, Dwarka, Delhi 110075 and Inter University Accelerator Centre, New Delhi-110067 and Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102 and Inter University Accelerator Centre, New Delhi-110067},
abstractNote = {PbTe thin film were synthesized using thermal evaporation and irradiated by 100 MeV Ag ions at different fluences ranging from 3x10{sup 13} and 1x10{sup 14} ions/cm{sup 2}. Pristine films annealed under Ar atm at 250 deg. C for 1 hr. X-ray Diffraction (XRD) of pristine and irradiated films reveals the improvement of PbTe phase with increasing fluence. The thickness of the film is decreased from 195 nm to 150 nm after ion irradiation as indicated by Rutherford backscattering spectrometry (RBS) analysis due to the sputtering. Resistivity measurement using four probe techniques of these films shows the conductivity enhancement with ion fluence. The conductivity is found to be {approx} 6 fold at fluence 3x10{sup 13} ions/cm{sup 2} whereas it decreases to 3 fold after annealing in comparison to pristine sample. On further increasing the fluence from 3x10{sup 13} ions/cm{sup 2}, the properties of the film begin to deteriorate. SHI induced modification may be explained on the basis of oxygen desorption and change in stochiometry of film during irradiation.},
doi = {10.1063/1.4710225},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}