skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Nano structuring of GaAs(100) surface using low energy ion irradiation

Abstract

Nanostructuring of semi insulating GaAs (100) has been observed after irradiation of 50 keV Ar{sup +} ion beam in a wide angular range of 0 deg. to 60 deg. with respect to surface normal. Atomic Force Microscopy (AFM) analysis shows the formation of nano dots at smaller angle of irradiation. At higher angle of irradiation, self organized ripples were developed on the surface. The rms roughness estimated from the AFM analysis shows exponential growth with angle of irradiation. In the high frequency regime, PSD analysis suggests that surface morphology of the irradiated samples is governed by the surface diffusion and mass transport dominated processes.

Authors:
; ; ;  [1]
  1. Inter-university Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067 (India)
Publication Date:
OSTI Identifier:
22004138
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ARGON IONS; ATOMIC FORCE MICROSCOPY; DIFFUSION; GALLIUM ARSENIDES; ION BEAMS; IRRADIATION; MORPHOLOGY; NANOSTRUCTURES; RADIATION EFFECTS; ROUGHNESS; SEMICONDUCTOR MATERIALS; SURFACES

Citation Formats

Kumar, Tanuj, Khan, S. A., Verma, S., and Kanjilal, D. Nano structuring of GaAs(100) surface using low energy ion irradiation. United States: N. p., 2012. Web. doi:10.1063/1.4710197.
Kumar, Tanuj, Khan, S. A., Verma, S., & Kanjilal, D. Nano structuring of GaAs(100) surface using low energy ion irradiation. United States. doi:10.1063/1.4710197.
Kumar, Tanuj, Khan, S. A., Verma, S., and Kanjilal, D. Tue . "Nano structuring of GaAs(100) surface using low energy ion irradiation". United States. doi:10.1063/1.4710197.
@article{osti_22004138,
title = {Nano structuring of GaAs(100) surface using low energy ion irradiation},
author = {Kumar, Tanuj and Khan, S. A. and Verma, S. and Kanjilal, D.},
abstractNote = {Nanostructuring of semi insulating GaAs (100) has been observed after irradiation of 50 keV Ar{sup +} ion beam in a wide angular range of 0 deg. to 60 deg. with respect to surface normal. Atomic Force Microscopy (AFM) analysis shows the formation of nano dots at smaller angle of irradiation. At higher angle of irradiation, self organized ripples were developed on the surface. The rms roughness estimated from the AFM analysis shows exponential growth with angle of irradiation. In the high frequency regime, PSD analysis suggests that surface morphology of the irradiated samples is governed by the surface diffusion and mass transport dominated processes.},
doi = {10.1063/1.4710197},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}