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Title: Optical and electronic properties of Ti{sub 1-x}Nb{sub x}N thin films

Abstract

Ti{sub 1-x}Nb{sub x}N thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti{sub 1-x}Nb{sub x}N film.

Authors:
; ; ;  [1];  [2];  [2];  [2]
  1. School of Physics, Centre for Nanotechnology, University of Hyderabad, Hyderabad-500 046 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22004137
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; DIELECTRIC MATERIALS; INFRARED SPECTRA; NIOBIUM NITRIDES; PERMITTIVITY; PLASMA; REFLECTIVITY; SILICON; SPECTRAL REFLECTANCE; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM NITRIDES; ULTRAVIOLET SPECTRA

Citation Formats

Vasu, K., Gopikrishnan, G. M., Krishna, M. Ghanashyam, Padmanabhan, K. A., School of Physics, University of Hyderabad, Hyderabad-500 046, School of Physics, Centre for Nanotechnology, University of Hyderabad, Hyderabad-500 046, and Centre for Nanotechnology, School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad-500 046. Optical and electronic properties of Ti{sub 1-x}Nb{sub x}N thin films. United States: N. p., 2012. Web. doi:10.1063/1.4710195.
Vasu, K., Gopikrishnan, G. M., Krishna, M. Ghanashyam, Padmanabhan, K. A., School of Physics, University of Hyderabad, Hyderabad-500 046, School of Physics, Centre for Nanotechnology, University of Hyderabad, Hyderabad-500 046, & Centre for Nanotechnology, School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad-500 046. Optical and electronic properties of Ti{sub 1-x}Nb{sub x}N thin films. United States. doi:10.1063/1.4710195.
Vasu, K., Gopikrishnan, G. M., Krishna, M. Ghanashyam, Padmanabhan, K. A., School of Physics, University of Hyderabad, Hyderabad-500 046, School of Physics, Centre for Nanotechnology, University of Hyderabad, Hyderabad-500 046, and Centre for Nanotechnology, School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad-500 046. Tue . "Optical and electronic properties of Ti{sub 1-x}Nb{sub x}N thin films". United States. doi:10.1063/1.4710195.
@article{osti_22004137,
title = {Optical and electronic properties of Ti{sub 1-x}Nb{sub x}N thin films},
author = {Vasu, K. and Gopikrishnan, G. M. and Krishna, M. Ghanashyam and Padmanabhan, K. A. and School of Physics, University of Hyderabad, Hyderabad-500 046 and School of Physics, Centre for Nanotechnology, University of Hyderabad, Hyderabad-500 046 and Centre for Nanotechnology, School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad-500 046},
abstractNote = {Ti{sub 1-x}Nb{sub x}N thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti{sub 1-x}Nb{sub x}N film.},
doi = {10.1063/1.4710195},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}