Optical and electronic properties of Ti{sub 1-x}Nb{sub x}N thin films

Journal Article · Tue Jun 05 00:00:00 EDT 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4710195· OSTI ID:22004137

Vasu, K; Gopikrishnan, G M; Krishna, M Ghanashyam; Padmanabhan, K A ^[1]

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1. School of Physics, Centre for Nanotechnology, University of Hyderabad, Hyderabad-500 046 (India)

Ti{sub 1-x}Nb{sub x}N thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti{sub 1-x}Nb{sub x}N film.

• OSTI ID: 22004137
• Journal Information: AIP Conference Proceedings, Vol. 1447, Issue 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
DIELECTRIC MATERIALS
INFRARED SPECTRA
NIOBIUM NITRIDES
PERMITTIVITY
PLASMA
REFLECTIVITY
SILICON
SPECTRAL REFLECTANCE
SPUTTERING
SUBSTRATES
THIN FILMS
TITANIUM NITRIDES
ULTRAVIOLET SPECTRA