Study of local in-homogeneity in ion beam mixing using SIMS ion imaging techniques
Journal Article
·
· AIP Conference Proceedings
- Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, kalpakkam-603102 (India)
The local in-homogeneity in ion beam mixing of Mo/Si system subjected to 110keV Ar{sup +} ion implantation is studied using secondary ion imaging. Sequences of images are recorded across the interface and depth profiles are constructed from different regions of the image planes. Our results show a significant variation in decay length indicative of in-homogeneity in mixing.
- OSTI ID:
- 22004134
- Journal Information:
- AIP Conference Proceedings, Vol. 1447, Issue 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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