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Title: Study of local in-homogeneity in ion beam mixing using SIMS ion imaging techniques

Abstract

The local in-homogeneity in ion beam mixing of Mo/Si system subjected to 110keV Ar{sup +} ion implantation is studied using secondary ion imaging. Sequences of images are recorded across the interface and depth profiles are constructed from different regions of the image planes. Our results show a significant variation in decay length indicative of in-homogeneity in mixing.

Authors:
; ; ;  [1]
  1. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, kalpakkam-603102 (India)
Publication Date:
OSTI Identifier:
22004134
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ARGON IONS; DEPTH; IMAGES; INTERFACES; ION BEAMS; ION IMPLANTATION; ION MICROPROBE ANALYSIS; LENGTH; MASS SPECTROSCOPY; MIXING; MOLYBDENUM; SILICON; VARIATIONS

Citation Formats

Singh, Ch. Kishan, Ilango, S., Dash, S., and Tyagi, A. K. Study of local in-homogeneity in ion beam mixing using SIMS ion imaging techniques. United States: N. p., 2012. Web. doi:10.1063/1.4710186.
Singh, Ch. Kishan, Ilango, S., Dash, S., & Tyagi, A. K. Study of local in-homogeneity in ion beam mixing using SIMS ion imaging techniques. United States. doi:10.1063/1.4710186.
Singh, Ch. Kishan, Ilango, S., Dash, S., and Tyagi, A. K. Tue . "Study of local in-homogeneity in ion beam mixing using SIMS ion imaging techniques". United States. doi:10.1063/1.4710186.
@article{osti_22004134,
title = {Study of local in-homogeneity in ion beam mixing using SIMS ion imaging techniques},
author = {Singh, Ch. Kishan and Ilango, S. and Dash, S. and Tyagi, A. K.},
abstractNote = {The local in-homogeneity in ion beam mixing of Mo/Si system subjected to 110keV Ar{sup +} ion implantation is studied using secondary ion imaging. Sequences of images are recorded across the interface and depth profiles are constructed from different regions of the image planes. Our results show a significant variation in decay length indicative of in-homogeneity in mixing.},
doi = {10.1063/1.4710186},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}