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Title: Dielectric behavior of Ar{sup +} implanted CR-39 polymer

Abstract

The frequency dependent dielectric response of Ar{sup +} implanted CR-39 specimens has been studied. Samples were implanted with 130 keV Ar{sup +} ions to various doses ranging from 5x10{sup 14} to 1x10{sup 16} cm{sup -2}. The frequency response of dielectric constant (e) and dielectric loss has been studied both in the pristine and argon ion implanted samples of CR-39 polymer in the frequency range 10{sup 4} to 10{sup 8} Hz. Structural changes produced in CR-39 specimens due to implantation have been studied using Attenuated total reflectance (ATR) Fourier transform infrared spectroscopic technique. Results of dielectric analysis indicate the lowering in dielectric constant ({epsilon}') and similar behavior of dielectric loss with increase in ion fluence. An attempt has been made to correlate these changes produced in the dielectric properties of implanted specimens with the structural changes produced due to implantation.

Authors:
; ; ; ;  [1];  [2];  [2]
  1. Department of Physics, Kurukshetra University Kurukshetra-136119 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22004123
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON IONS; DIELECTRIC MATERIALS; FOURIER TRANSFORMATION; FREQUENCY DEPENDENCE; INDIUM IONS; INFRARED SPECTRA; ION BEAMS; ION IMPLANTATION; PERMITTIVITY; POLYMERS; RADIATION DOSES; RADIATION EFFECTS; REFLECTION; RELAXATION LOSSES

Citation Formats

Shekhawat, Nidhi, Sharma, Annu, Aggarwal, Sanjeev, Deshpande, S. K., Nair, K. G. M., UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, Mumbai 400085, and Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102. Dielectric behavior of Ar{sup +} implanted CR-39 polymer. United States: N. p., 2012. Web. doi:10.1063/1.4710149.
Shekhawat, Nidhi, Sharma, Annu, Aggarwal, Sanjeev, Deshpande, S. K., Nair, K. G. M., UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, Mumbai 400085, & Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102. Dielectric behavior of Ar{sup +} implanted CR-39 polymer. United States. doi:10.1063/1.4710149.
Shekhawat, Nidhi, Sharma, Annu, Aggarwal, Sanjeev, Deshpande, S. K., Nair, K. G. M., UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, Mumbai 400085, and Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102. Tue . "Dielectric behavior of Ar{sup +} implanted CR-39 polymer". United States. doi:10.1063/1.4710149.
@article{osti_22004123,
title = {Dielectric behavior of Ar{sup +} implanted CR-39 polymer},
author = {Shekhawat, Nidhi and Sharma, Annu and Aggarwal, Sanjeev and Deshpande, S. K. and Nair, K. G. M. and UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, Mumbai 400085 and Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102},
abstractNote = {The frequency dependent dielectric response of Ar{sup +} implanted CR-39 specimens has been studied. Samples were implanted with 130 keV Ar{sup +} ions to various doses ranging from 5x10{sup 14} to 1x10{sup 16} cm{sup -2}. The frequency response of dielectric constant (e) and dielectric loss has been studied both in the pristine and argon ion implanted samples of CR-39 polymer in the frequency range 10{sup 4} to 10{sup 8} Hz. Structural changes produced in CR-39 specimens due to implantation have been studied using Attenuated total reflectance (ATR) Fourier transform infrared spectroscopic technique. Results of dielectric analysis indicate the lowering in dielectric constant ({epsilon}') and similar behavior of dielectric loss with increase in ion fluence. An attempt has been made to correlate these changes produced in the dielectric properties of implanted specimens with the structural changes produced due to implantation.},
doi = {10.1063/1.4710149},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}