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Title: Formation of NiSi{sub 2} nanoclusters by Ni ion implantation into Si(100) and the effect of preinjection of Si{sub 2}{sup +} ions

Abstract

Cluster ions can produce surface craters and amorphous ion tracks in semiconductors. This process in combination with defect mediated diffusion can be applied to fabricate buried nanowires. 1.4 MeV Si{sub 2}{sup +} ions at low fluences and 400 keV Ni{sup +} ions at high fluence are implanted into Si(100) and annealed at 600 deg. C. NiSi{sub 2} nanoclusters are formed and TEM measurements show surface craters of around 30 nm diameter which are followed by amorphous tracks of diameter 15 nm caused by the Si{sub 2}{sup +} ions in Si substrate. 50 nm long finger like buried vertical nanowires from the silicide clusters are formed along the amorphous track which is due to diffusion of Nickel atoms towards the surface mediated by the defects in the track. It is a step closer to the fabrication of buried nanowires.

Authors:
; ; ; ;  [1];  [2];  [2]
  1. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22004088
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CRYSTAL STRUCTURE; DIFFUSION; ION BEAMS; ION IMPLANTATION; ION PAIRS; IRRADIATION; NICKEL; NICKEL IONS; NICKEL SILICIDES; PARTICLE TRACKS; PHYSICAL RADIATION EFFECTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; SILICON IONS; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Sundaravel, B., Kalavathi, S., SanthanaRaman, P., Satyam, P. V., Nair, K.G.M., Institute of Physics, Bhubaneswar 751005, and Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102. Formation of NiSi{sub 2} nanoclusters by Ni ion implantation into Si(100) and the effect of preinjection of Si{sub 2}{sup +} ions. United States: N. p., 2012. Web. doi:10.1063/1.4709991.
Sundaravel, B., Kalavathi, S., SanthanaRaman, P., Satyam, P. V., Nair, K.G.M., Institute of Physics, Bhubaneswar 751005, & Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102. Formation of NiSi{sub 2} nanoclusters by Ni ion implantation into Si(100) and the effect of preinjection of Si{sub 2}{sup +} ions. United States. doi:10.1063/1.4709991.
Sundaravel, B., Kalavathi, S., SanthanaRaman, P., Satyam, P. V., Nair, K.G.M., Institute of Physics, Bhubaneswar 751005, and Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102. Tue . "Formation of NiSi{sub 2} nanoclusters by Ni ion implantation into Si(100) and the effect of preinjection of Si{sub 2}{sup +} ions". United States. doi:10.1063/1.4709991.
@article{osti_22004088,
title = {Formation of NiSi{sub 2} nanoclusters by Ni ion implantation into Si(100) and the effect of preinjection of Si{sub 2}{sup +} ions},
author = {Sundaravel, B. and Kalavathi, S. and SanthanaRaman, P. and Satyam, P. V. and Nair, K.G.M. and Institute of Physics, Bhubaneswar 751005 and Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102},
abstractNote = {Cluster ions can produce surface craters and amorphous ion tracks in semiconductors. This process in combination with defect mediated diffusion can be applied to fabricate buried nanowires. 1.4 MeV Si{sub 2}{sup +} ions at low fluences and 400 keV Ni{sup +} ions at high fluence are implanted into Si(100) and annealed at 600 deg. C. NiSi{sub 2} nanoclusters are formed and TEM measurements show surface craters of around 30 nm diameter which are followed by amorphous tracks of diameter 15 nm caused by the Si{sub 2}{sup +} ions in Si substrate. 50 nm long finger like buried vertical nanowires from the silicide clusters are formed along the amorphous track which is due to diffusion of Nickel atoms towards the surface mediated by the defects in the track. It is a step closer to the fabrication of buried nanowires.},
doi = {10.1063/1.4709991},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1447,
place = {United States},
year = {2012},
month = {6}
}