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Title: Spin polarization of a Ferromagnetic Narrow Gap p-(In,Mn)As Obtained from Andreev Reflection Spectroscopy

Abstract

Spin-polarized carrier transport across Nb/p-(In,Mn)As junctions has been studied. Suppressions of conductance in the superconductor sub-gap region and conductance peaks at the bias voltage around the edge of the sub-gap are observed. These features are well reproduced by a newly modified BTK model including both spin polarization and the inverse proximity effect. The value of spin polarization in p-(In,Mn)As extracted by the calculation is P = 0.725 at 0.5 K with Z = 0.25.

Authors:
 [1];  [2];  [3];  [4];  [5]
  1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 (Japan)
  2. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 425-R2-57 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
  3. Dept. Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8550 (Japan)
  4. Dept. Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603 (Japan)
  5. Research Institute for Science and Technology, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo, 162-8601 (Japan)
Publication Date:
OSTI Identifier:
22004012
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1416; Journal Issue: 1; Conference: NGS15: 15. international conference on narrow gap systems, Blacksburg, VA (United States), 1-5 Aug 2011; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ENERGY GAP; INDIUM ARSENIDES; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; NIOBIUM; PROXIMITY EFFECT; P-TYPE CONDUCTORS; REFLECTION; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SPIN ORIENTATION; SUPERCONDUCTORS

Citation Formats

Akazaki, T, Munekata, H, Yokoyama, T, Tanaka, Y, Takayanagi, H, and International Center for Materials Nanoarchitectronics, NIMS. Spin polarization of a Ferromagnetic Narrow Gap p-(In,Mn)As Obtained from Andreev Reflection Spectroscopy. United States: N. p., 2011. Web. doi:10.1063/1.3671708.
Akazaki, T, Munekata, H, Yokoyama, T, Tanaka, Y, Takayanagi, H, & International Center for Materials Nanoarchitectronics, NIMS. Spin polarization of a Ferromagnetic Narrow Gap p-(In,Mn)As Obtained from Andreev Reflection Spectroscopy. United States. https://doi.org/10.1063/1.3671708
Akazaki, T, Munekata, H, Yokoyama, T, Tanaka, Y, Takayanagi, H, and International Center for Materials Nanoarchitectronics, NIMS. Mon . "Spin polarization of a Ferromagnetic Narrow Gap p-(In,Mn)As Obtained from Andreev Reflection Spectroscopy". United States. https://doi.org/10.1063/1.3671708.
@article{osti_22004012,
title = {Spin polarization of a Ferromagnetic Narrow Gap p-(In,Mn)As Obtained from Andreev Reflection Spectroscopy},
author = {Akazaki, T and Munekata, H and Yokoyama, T and Tanaka, Y and Takayanagi, H and International Center for Materials Nanoarchitectronics, NIMS},
abstractNote = {Spin-polarized carrier transport across Nb/p-(In,Mn)As junctions has been studied. Suppressions of conductance in the superconductor sub-gap region and conductance peaks at the bias voltage around the edge of the sub-gap are observed. These features are well reproduced by a newly modified BTK model including both spin polarization and the inverse proximity effect. The value of spin polarization in p-(In,Mn)As extracted by the calculation is P = 0.725 at 0.5 K with Z = 0.25.},
doi = {10.1063/1.3671708},
url = {https://www.osti.gov/biblio/22004012}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1416,
place = {United States},
year = {2011},
month = {12}
}