The Effects of UV Treatment on Thermal and Plasma-Enhanced Atomic Layer Deposition of ZnO Thin Film Transistor

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666664· OSTI ID:21612446

Kim, Jae-Min; Kim, Doyoung; Kim, Hyungjun ^[1]; Lim, S J ^[2]

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1. School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)
2. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)

We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.

• OSTI ID: 21612446
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666664; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
CHARGE EXCHANGE
DEPOSITION
ELECTRIC POTENTIAL
LAYERS
PHOTOCONDUCTIVITY
PLASMA
THIN FILMS
TRANSISTORS
ULTRAVIOLET RADIATION
ZINC OXIDES
CHALCOGENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
FILMS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR DEVICES
ZINC COMPOUNDS