Growth and Magneto-transport Characterization of Double-doped InGaAs/InAlAs Heterostructures with High Indium Compositions

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666582· OSTI ID:21612437

Akabori, M; Morimoto, K; Wei, W; Iwase, H; Yamada, S ^[1]

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1. Center for Nano-Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1, Asahidai, Nomi, Ishikawa 923-1292 (Japan)

We investigated double-doped InGaAs/InAlAs heterostructures with high indium compositions. The heterostructures were grown by molecular beam epitaxy on GaAs(001) with metamorphic step-graded buffer layers. The magneto-transport characterization was performed by using Hall-bar devices. We observed non-monotonic magneto-resistance oscillations, which indicate a single two-dimensional electron gas (2DEG) with multiple-subband occupation or a 2DEG bilayer. We also observed weak-antilocalization in all samples, which is an evidence of spin-orbit coupling.

• OSTI ID: 21612437
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666582; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON GAS
GALLIUM ARSENIDES
HALL EFFECT
HETEROJUNCTIONS
INDIUM ARSENIDES
LAYERS
L-S COUPLING
MAGNETORESISTANCE
MOLECULAR BEAM EPITAXY
OSCILLATIONS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
CRYSTAL GROWTH METHODS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INTERMEDIATE COUPLING
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS