Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires
Journal Article
·
· AIP Conference Proceedings
- Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway)
- School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.
- OSTI ID:
- 21612405
- Journal Information:
- AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666437; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
BAND THEORY
CRYSTAL GROWTH
ENERGY GAP
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PHOTOCURRENTS
QUANTUM WIRES
TEMPERATURE DEPENDENCE
ZINC SULFIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
NANOSTRUCTURES
PHOSPHORS
PHYSICAL PROPERTIES
PNICTIDES
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
BAND THEORY
CRYSTAL GROWTH
ENERGY GAP
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PHOTOCURRENTS
QUANTUM WIRES
TEMPERATURE DEPENDENCE
ZINC SULFIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
NANOSTRUCTURES
PHOSPHORS
PHYSICAL PROPERTIES
PNICTIDES
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS