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Title: Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3666437· OSTI ID:21612405
; ; ; ; ; ;  [1]; ; ;  [2]
  1. Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway)
  2. School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

OSTI ID:
21612405
Journal Information:
AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666437; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English