Theoretical And Experimental Studies Of The Effects Of Rapid Thermal Annealing In GaAs/AlGaAs Quantum Dots Grown By Droplet Epitaxy

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666435· OSTI ID:21612404

Moon, P ^[1]; Ha, S -K; Song, J D; Lim, J Y; Choi, W J; Han, I K; Lee, J I ^[1]; Bounouar, S; Donatini, F; Dang, L S; Poizat, J P ^[2]; Kim, J S ^[3]

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1. Nano Convergence Devices Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of)
2. CEA/CNRS/UJF team 'Nanophysics and semiconductors', Institute Neel/CNRS-UJF, Grenoble (France)
3. Department of Physics, Yeungnam University, Gyeonsan (Korea, Republic of)

We fabricated low-density GaAs/AlGaAs quantum dots for single photon source by droplet epitaxy. We investigated the emission energies of the dots and underlying superlattice by using photoluminescence and cathodoluminescence measurements. By forming a mesa etched structure, we distinguished the transitions from the superlattice and the dots. And we calculated the diffusion length in this system from the peak shift of the superlattice, and applied the diffusion to the dots to investigate the emission energy shift of the QDs.z

• OSTI ID: 21612404
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666435; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
ANNEALING
CATHODOLUMINESCENCE
CRYSTAL GROWTH
DENSITY
DIFFUSION
DIFFUSION LENGTH
DROPLETS
GALLIUM ARSENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
QUANTUM DOTS
SUPERLATTICES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BOSONS
CRYSTAL GROWTH METHODS
DIMENSIONS
ELEMENTARY PARTICLES
EMISSION
EPITAXY
GALLIUM COMPOUNDS
HEAT TREATMENTS
LENGTH
LUMINESCENCE
MASSLESS PARTICLES
NANOSTRUCTURES
PARTICLES
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES