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Title: Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors

Abstract

Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

Authors:
 [1]
  1. Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21612400
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1399; Journal Issue: 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666417; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; BOUNDARY CONDITIONS; CHARGE CARRIERS; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; ELECTRON BEAMS; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; LANGEVIN EQUATION; MEAN FREE PATH; METALS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; STOCHASTIC PROCESSES; TRANSPORT THEORY; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL GROWTH METHODS; ELEMENTARY PARTICLES; ELEMENTS; EPITAXY; EQUATIONS; FERMIONS; GALLIUM COMPOUNDS; LEPTON BEAMS; LEPTONS; MATERIALS; PARTICLE BEAMS; PNICTIDES; SEMICONDUCTOR DEVICES; SIMULATION; TRANSISTORS

Citation Formats

Han, Jaeheon. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors. United States: N. p., 2011. Web. doi:10.1063/1.3666417.
Han, Jaeheon. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors. United States. https://doi.org/10.1063/1.3666417
Han, Jaeheon. 2011. "Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors". United States. https://doi.org/10.1063/1.3666417.
@article{osti_21612400,
title = {Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors},
author = {Han, Jaeheon},
abstractNote = {Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.},
doi = {10.1063/1.3666417},
url = {https://www.osti.gov/biblio/21612400}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1399,
place = {United States},
year = {Fri Dec 23 00:00:00 EST 2011},
month = {Fri Dec 23 00:00:00 EST 2011}
}