Growth of M- and A-plane GaN on LiGaO{sub 2} by plasma-assisted MBE

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666320· OSTI ID:21612380

Schuber, R; Schaadt, D M ^[1]; Chou, M M. C. ^[2]; Vincze, P ^[3]; Schimmel, Th ^[1]

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1. Institute for Applied Physics, Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)
2. Department of Materials Science and Opto-electronic Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China)
3. Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)

We have performed non-polar M- and A-plane GaN growth on LiGaO{sub 2}(LGO) by plasma-assisted molecular beam expitaxy (MBE). We demonstrate that non-polar GaN growth on LGO yields high phase purity and flat surfaces. We find that annealing of the substrates prior to growth is a suitable method for avoiding a peeling off of the film from the substrate after growth.

• OSTI ID: 21612380
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666320; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
CRYSTALS
FILMS
GALLIUM NITRIDES
GALLIUM OXIDES
LITHIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
ORIENTATION
PHASE STABILITY
PHASE STUDIES
PLASMA
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
SURFACES
X-RAY DIFFRACTION
ALKALI METAL COMPOUNDS
BEAMS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
HEAT TREATMENTS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SCATTERING
STABILITY