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Title: Fano Resonance in GaAs 2D Photonic Crystal Nanocavities

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3666722· OSTI ID:21612368
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  1. Departamento de Fisica, Universidade Federal de Minas Gerais, Belo Horizonte (Brazil)
  2. Department of Physics and Astronomy, University of Sheffield, Sheffield (United Kingdom)
  3. Instituto de Fisica, Universidad de Antioquia, Medellin (Colombia)
  4. Departamento de Fisica, Facultad de Ciencias, Universidad Nacional de Colombia, Bogota (Colombia)

We report the results of polarization resolved reflectivity experiments in GaAs air-bridge photonic crystals with L3 cavities. We show that the fundamental L3 cavity mode changes, in a controlled way, from a Lorentzian symmetrical lineshape to an asymmetrical form when the linear polarization of the incident light is rotated in the plane of the crystal. The different lineshapes are well fitted by the Fano asymmetric equation, implying that a Fano resonance is present in the reflectivity. We use the scattering matrix method to model the Fano interference between a localized discrete state (the cavity fundamental mode) and a background of continuum states (the light reflected from the crystal slab in the vicinity of the cavity) with very good agreement with the experimental data.

OSTI ID:
21612368
Journal Information:
AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666722; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English