Free Carrier Absorption due to Dislocation Scattering in GaN Quantum Wells

Journal Article · Thu Oct 20 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3646783· OSTI ID:21612026

Vaidya, R G ^[1]; Sankeshwar, N S; Mulimani, B G ^[1]

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1. Department of Physics, Karnatak University, Dharwad, Karnataka (India)

Free carrier absorption (FCA) is studied in quantum well structures assuming electrons to be scattered by dislocations via strain field. Expression for FCA coefficient, {alpha} is obtained assuming radiation field to be polarized along the plane of quantum well. Numerical results of {alpha}, as function of photon frequency, {Omega} and well width, d are presented. Calculations show, FCA to decrease with increase in {Omega} with a kink observed at {Omega} = 7.79x10{sup 13} s{sup -1} indicating onset of inter subband transitions. {alpha} is found to be proportional to d{sup -3} and to increase with increase in dislocation density.

• OSTI ID: 21612026
• Journal Information: AIP Conference Proceedings, Vol. 1391, Issue 1; Conference: OPTICS 2011: International conference on light - Optics: phenomena, materials, devices, and characterization, Calicut, Kerala (India), 23-25 May 2011; Other Information: DOI: 10.1063/1.3646783; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
CHARGE CARRIERS
DISLOCATIONS
ELECTRONS
GALLIUM NITRIDES
PERMITTIVITY
PHOTONS
QUANTUM WELLS
SCATTERING
STRAINS
BOSONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIELECTRIC PROPERTIES
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
LEPTONS
LINE DEFECTS
MASSLESS PARTICLES
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SORPTION