The Dwell Time of Electron Tunneling Through a Double Barrier in the Presence of Rashba SOI

Journal Article · Mon Oct 03 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3647063· OSTI ID:21611726

Baltateanu, Doru-Marcel ^[1]

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1. West University of Timisoara, Faculty of Physics, Bd. V. Parvan, No.4, 300223, Timisoara (Romania)

Some aspects related to the influence of the Rashba spin-orbit interaction (SOI) on the dwell time spent by the electrons in an asymmetric double barrier are analyzed. It is revealed that in the presence of the Rashba SOI, a difference between the dwell times associated to the spin-up and spin-down species can be obtained. This opens the way to a spin filtration in the time domain.

• OSTI ID: 21611726
• Journal Information: AIP Conference Proceedings, Vol. 1387, Issue 1; Conference: TIM-10: Physics conference, Timisoara (Romania), 25-27 Nov 2010; Other Information: DOI: 10.1063/1.3647063; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ASYMMETRY
ELECTRONS
L-S COUPLING
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
QUANTUM MECHANICS
SPIN
TUNNEL EFFECT
ANGULAR MOMENTUM
COUPLING
ELEMENTARY PARTICLES
FERMIONS
INTERMEDIATE COUPLING
LEPTONS
MATERIALS
MECHANICS
PARTICLE PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS