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Title: Transport Properties Of Fe{sub 3-x}Ti{sub x}O{sub 4}(x = 0.0 and 0.0206) Epitaxial Thin Films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3606000· OSTI ID:21611525
 [1]; ;  [1];  [2]
  1. School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India)
  2. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore-452001 (India)

Fe{sub 3-x}Ti{sub x}O{sub 4}(x = 0 and 0.0206) epitaxial thin films with thickness of 150 nm were prepared by pulsed-laser deposition technique on SrTiO{sub 3}(100), {alpha}-Al{sub 2}O{sub 3}(0001), Si (111) and Float Glass substrates. X-ray diffraction (XRD) pattern infers that parent and Ti doped magnetites are grown in single phase with (111) orientation. The Verwey transition temperature for Fe{sub 3}O{sub 4} thin films are 121 K (Float Glass), 123 K (SrTiO{sub 3}), 123.5 K ({alpha}-Al{sub 2}O{sub 3}) and 128 K (Si). It is shown that the Ti doping at B site results in the disappearance of Verwey transition in {l_brace}Ti{sub x}{sup 4+}Fe{sub 1-x}{sup 3+}Fe{sup 2+}{r_brace}O{sub 4}{sup 2-}.

OSTI ID:
21611525
Journal Information:
AIP Conference Proceedings, Vol. 1349, Issue 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606000; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English

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