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Title: Study of Electrical Properties in SHI Irradiated 6H-SiC Crystals using Low Temperature Impedance Spectroscopy

Abstract

In the present work, low temperature impedance measurements were made on the pristine and Ag{sup 12+} ions irradiated 6H-SiC samples. The conductivity properties were studied at low temperature. The activation energies were calculated from the Arrhenius plot of d.c conductivity and impedance relaxation time. The activation energy was comparatively higher for the irradiated samples and found to be electronic conduction. From the study we observe the lower conductivity values exhibited for 300 K irradiated sample due to severe damage than the 80 K irradiated sample. The damage production mechanism and the change in electrical properties are discussed.

Authors:
; ;  [1];  [2];  [3]
  1. Materials Science Centre, Department of Nuclear Physics, University of Madras, Chennai 600025 (India)
  2. MIT Campus, Anna University, Guindy Campus, Chennai -600025 (India)
  3. Inter-University Accelerator Centre, Aruna Asaf Ali Marg. P.O. Box 10502, New Delhi 110067 (India)
Publication Date:
OSTI Identifier:
21608203
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1349; Journal Issue: 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606193; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE; ION BEAMS; PHYSICAL RADIATION EFFECTS; POLARIZATION; RELAXATION TIME; SILICON CARBIDES; SILVER IONS; TEMPERATURE DEPENDENCE; BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ENERGY; IMPEDANCE; IONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SILICON COMPOUNDS

Citation Formats

Viswanathan, E., Selvakumar, S., Sivaji, K., Murugaraj, R., and Kanjilal, D.. Study of Electrical Properties in SHI Irradiated 6H-SiC Crystals using Low Temperature Impedance Spectroscopy. United States: N. p., 2011. Web. doi:10.1063/1.3606193.
Viswanathan, E., Selvakumar, S., Sivaji, K., Murugaraj, R., & Kanjilal, D.. Study of Electrical Properties in SHI Irradiated 6H-SiC Crystals using Low Temperature Impedance Spectroscopy. United States. doi:10.1063/1.3606193.
Viswanathan, E., Selvakumar, S., Sivaji, K., Murugaraj, R., and Kanjilal, D.. Fri . "Study of Electrical Properties in SHI Irradiated 6H-SiC Crystals using Low Temperature Impedance Spectroscopy". United States. doi:10.1063/1.3606193.
@article{osti_21608203,
title = {Study of Electrical Properties in SHI Irradiated 6H-SiC Crystals using Low Temperature Impedance Spectroscopy},
author = {Viswanathan, E. and Selvakumar, S. and Sivaji, K. and Murugaraj, R. and Kanjilal, D.},
abstractNote = {In the present work, low temperature impedance measurements were made on the pristine and Ag{sup 12+} ions irradiated 6H-SiC samples. The conductivity properties were studied at low temperature. The activation energies were calculated from the Arrhenius plot of d.c conductivity and impedance relaxation time. The activation energy was comparatively higher for the irradiated samples and found to be electronic conduction. From the study we observe the lower conductivity values exhibited for 300 K irradiated sample due to severe damage than the 80 K irradiated sample. The damage production mechanism and the change in electrical properties are discussed.},
doi = {10.1063/1.3606193},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1349,
place = {United States},
year = {2011},
month = {7}
}