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Title: Nano Pattern on n-Si (100) Surface by Ion Irradiation

Abstract

Nano structuring of silicon surface by low energy ion irradiation is reported. Semi insulating n-Si (100) has been irradiated by 50 keV Ar{sup +} ion beam at an angle of 50 deg. with respect to surface normal. The irradiated sample's surfaces were analyzed by Atomic Force Microscopy. Irradiation caused formation of nano-sized elliptical dots aligned in rows perpendicular to ion beam direction at fluence of 1x10{sup 17} ions/cm{sup 2}. At higher fluences of 3x10{sup 17} ions/cm{sup 2} and 7x10{sup 17} ions/cm{sup 2} self organized ripples were developed on the surface.

Authors:
; ; ; ;  [1]
  1. Inter-university Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067 (India)
Publication Date:
OSTI Identifier:
21608188
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1349; Journal Issue: 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606064; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ARGON IONS; ATOMIC FORCE MICROSCOPY; ION BEAMS; IRRADIATION; KEV RANGE; NANOSTRUCTURES; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON; SURFACES; BEAMS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; MATERIALS; MICROSCOPY; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS

Citation Formats

Kumar, Tanuj, Khan, S A, Singh, U B, Verma, S, and Kanjilal, D. Nano Pattern on n-Si (100) Surface by Ion Irradiation. United States: N. p., 2011. Web. doi:10.1063/1.3606064.
Kumar, Tanuj, Khan, S A, Singh, U B, Verma, S, & Kanjilal, D. Nano Pattern on n-Si (100) Surface by Ion Irradiation. United States. https://doi.org/10.1063/1.3606064
Kumar, Tanuj, Khan, S A, Singh, U B, Verma, S, and Kanjilal, D. 2011. "Nano Pattern on n-Si (100) Surface by Ion Irradiation". United States. https://doi.org/10.1063/1.3606064.
@article{osti_21608188,
title = {Nano Pattern on n-Si (100) Surface by Ion Irradiation},
author = {Kumar, Tanuj and Khan, S A and Singh, U B and Verma, S and Kanjilal, D},
abstractNote = {Nano structuring of silicon surface by low energy ion irradiation is reported. Semi insulating n-Si (100) has been irradiated by 50 keV Ar{sup +} ion beam at an angle of 50 deg. with respect to surface normal. The irradiated sample's surfaces were analyzed by Atomic Force Microscopy. Irradiation caused formation of nano-sized elliptical dots aligned in rows perpendicular to ion beam direction at fluence of 1x10{sup 17} ions/cm{sup 2}. At higher fluences of 3x10{sup 17} ions/cm{sup 2} and 7x10{sup 17} ions/cm{sup 2} self organized ripples were developed on the surface.},
doi = {10.1063/1.3606064},
url = {https://www.osti.gov/biblio/21608188}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1349,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2011},
month = {Fri Jul 15 00:00:00 EDT 2011}
}