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Title: Electronic Structure Studies of 200 MeV Ag{sup +15} Swift Heavy Ion Irradiated SnO{sub 2} Thin Films Using X-Ray Absorption Spectroscopy

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3606007· OSTI ID:21608178
;  [1];  [2];  [3]
  1. Department of Physics, National Institute of Technology, Hamirpur (H.P.)-177 005 (India)
  2. Center for Material Science and Engineering, National Institute of Technology, Hamirpur (H.P.)-177 005 (India)
  3. European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex (France)

Tin dioxide (SnO{sub 2}) thin films were deposited on a well cleaned sapphire single crystal substrate by rf magnetron sputtering technique. After deposition, films were irradiated by swift heavy ion (SHI) irradiation at various ion fluences. We present the X-ray absorption spectra (XAS) at the oxygen K- and Sn M{sub 5,4,} edge. The XAS pattern reveals the broadening of O K- and Sn M{sub 5,4,} edge features with increasing ion fluence. The fraction of under-coordinated surface atoms in the SnO{sub 2} thin films increases, which is attributed to the structural distortions induced by SHI irradiations.

OSTI ID:
21608178
Journal Information:
AIP Conference Proceedings, Vol. 1349, Issue 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606007; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English