Mixing Of Mode Symmetries In Top Gated Bilayer And Multilayer Graphene Field Effect Devices

Journal Article · Fri Jul 15 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3605726· OSTI ID:21608130

Chakraborty, Biswanath; Das, Anindya; Sood, A K ^[1]

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1. Department of Physics, Indian Institute of Science, Bangalore 560 012 (India)

We report Raman study to investigate the influence of stacking on the inversion symmetry breaking in top gated bi- and multi-layer ({approx}10 layers) graphene field effect transistors. The G phonon mode splits into a low frequency (G{sub low}) and a high frequency (G{sub high}) mode in bi- and multi-layer graphene and the two modes show different dependence on doping. The mode splitting is explained in terms of mixing of zone-center in-plane optical phonons representing in-phase and out-of-phase inter-layer atomic motions. Unlike in bilayer graphene, there is no transfer of intensity from G{sub low} to G{sub high} in multilayer graphene. A comparison is made for the bilayer graphene data with the recent theory of Gava et al. [Phys. Rev. B 80, 155422 (2009)].

• OSTI ID: 21608130
• Journal Information: AIP Conference Proceedings, Vol. 1349, Issue 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3605726; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CARBON COMPOUNDS
COMPARATIVE EVALUATIONS
FIELD EFFECT TRANSISTORS
GRAPHITE
LAYERS
MIXING
NANOSTRUCTURES
PHONONS
RAMAN SPECTROSCOPY
SYMMETRY
SYMMETRY BREAKING
CARBON
ELEMENTS
EVALUATION
LASER SPECTROSCOPY
MINERALS
NONMETALS
QUASI PARTICLES
SEMICONDUCTOR DEVICES
SPECTROSCOPY
TRANSISTORS