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Title: Defect Formation in GaN Epitaxial Layers due to SHI Irradiation

Abstract

GaN epitaxial layers were irradiated with 200 MeV swift heavy Ag ions at various fluences. These samples were then characterized by XRD and TEM. Increase in peak width (FWHM) with incident ion dose showed reduction in crystallinity of epitaxial layers. Cross sectional TEM images confirmed that at highest fluence (5x10{sup 12} ions/cm{sup 2}) electronic energy loss process caused structural defect formation in GaN layer.

Authors:
; ;  [1];  [2]
  1. Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016 (India)
  2. Inter University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, New Delhi, 110067 (India)
Publication Date:
OSTI Identifier:
21608126
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1349; Journal Issue: 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606246; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ENERGY LOSSES; EPITAXY; GALLIUM NITRIDES; ION BEAMS; IONIC CONDUCTIVITY; IRRADIATION; LAYERS; MEV RANGE; PHYSICAL RADIATION EFFECTS; SILVER IONS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; BEAMS; CHARGED PARTICLES; CHEMICAL COATING; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DEPOSITION; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ENERGY RANGE; GALLIUM COMPOUNDS; IONS; LOSSES; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SCATTERING; SURFACE COATING

Citation Formats

Kumar, Ashish, Kumar, V., Singh, R., and Kanjilal, D.. Defect Formation in GaN Epitaxial Layers due to SHI Irradiation. United States: N. p., 2011. Web. doi:10.1063/1.3606246.
Kumar, Ashish, Kumar, V., Singh, R., & Kanjilal, D.. Defect Formation in GaN Epitaxial Layers due to SHI Irradiation. United States. doi:10.1063/1.3606246.
Kumar, Ashish, Kumar, V., Singh, R., and Kanjilal, D.. Fri . "Defect Formation in GaN Epitaxial Layers due to SHI Irradiation". United States. doi:10.1063/1.3606246.
@article{osti_21608126,
title = {Defect Formation in GaN Epitaxial Layers due to SHI Irradiation},
author = {Kumar, Ashish and Kumar, V. and Singh, R. and Kanjilal, D.},
abstractNote = {GaN epitaxial layers were irradiated with 200 MeV swift heavy Ag ions at various fluences. These samples were then characterized by XRD and TEM. Increase in peak width (FWHM) with incident ion dose showed reduction in crystallinity of epitaxial layers. Cross sectional TEM images confirmed that at highest fluence (5x10{sup 12} ions/cm{sup 2}) electronic energy loss process caused structural defect formation in GaN layer.},
doi = {10.1063/1.3606246},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1349,
place = {United States},
year = {2011},
month = {7}
}