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Title: Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy

Abstract

The analysis of core levels positions of Ga{sub 3}d, N{sub 1s} and P{sub 2}p at different etching depth from the plasma nitrided GaP (111) surface shows that the nitrogen ions interact with both Gallium and Phosphorous ions with nearly equal probability. The analysis of valence band spectra shows the type-II band alignment between GaPN{sub 0.22}/GaP and the valence band offset is {approx}2.2{+-}0.1 eV.

Authors:
; ;  [1]; ;  [2];
  1. Raja Ramanna Centre for Advanced Technology, Indore-452013, M.P. (India)
  2. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001, M.P. (India)
Publication Date:
OSTI Identifier:
21608125
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1349; Journal Issue: 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606242; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; BAND THEORY; CHARGE EXCHANGE; CRYSTAL STRUCTURE; ETCHING; EV RANGE; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; INTERFACES; PROBABILITY; SEMICONDUCTOR MATERIALS; SURFACES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY; ELECTRON SPECTROSCOPY; ENERGY RANGE; GALLIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; SPECTROSCOPY; SURFACE FINISHING

Citation Formats

Khamari, Shailesh K., Sinha, A. K., Oak, S. M., Banik, S., Barman, S. R., and Dixit, V. K.. Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy. United States: N. p., 2011. Web. doi:10.1063/1.3606242.
Khamari, Shailesh K., Sinha, A. K., Oak, S. M., Banik, S., Barman, S. R., & Dixit, V. K.. Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy. United States. doi:10.1063/1.3606242.
Khamari, Shailesh K., Sinha, A. K., Oak, S. M., Banik, S., Barman, S. R., and Dixit, V. K.. Fri . "Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy". United States. doi:10.1063/1.3606242.
@article{osti_21608125,
title = {Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy},
author = {Khamari, Shailesh K. and Sinha, A. K. and Oak, S. M. and Banik, S. and Barman, S. R. and Dixit, V. K.},
abstractNote = {The analysis of core levels positions of Ga{sub 3}d, N{sub 1s} and P{sub 2}p at different etching depth from the plasma nitrided GaP (111) surface shows that the nitrogen ions interact with both Gallium and Phosphorous ions with nearly equal probability. The analysis of valence band spectra shows the type-II band alignment between GaPN{sub 0.22}/GaP and the valence band offset is {approx}2.2{+-}0.1 eV.},
doi = {10.1063/1.3606242},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1349,
place = {United States},
year = {2011},
month = {7}
}